Low-defect-density WS2 by hydroxide vapor phase deposition

Yi Wan; En Li; Zhihao Yu; Jing-Kai Huang; Ming-Yang Li; Ang-Sheng Chou; Yi-Te Lee; Chien-Ju Lee; Hung-Chang Hsu; Qin Zhan; Areej Aljarb; Jui-Han Fu; Shao-Pin Chiu; Xinran Wang; Juhn-Jong Lin; Ya-Ping Chiu; Wen-Hao Chang; Han Wang; Yumeng Shi; Nian Lin; Yingchun Cheng; Vincent Tung; Lain-Jong Li

doi:10.1038/s41467-022-31886-0

Low-defect-density WS₂ by hydroxide vapor phase deposition

Yi Wan, En Li, Zhihao Yu, Jing-Kai Huang, Ming-Yang Li, Ang-Sheng Chou, Yi-Te Lee, Chien-Ju Lee, Hung-Chang Hsu, Qin Zhan, Areej Aljarb, Jui-Han Fu, Shao-Pin Chiu, Xinran Wang, Juhn-Jong Lin, Ya-Ping Chiu, Wen-Hao Chang, Han Wang, Yumeng Shi, Nian LinYingchun Cheng^*, Vincent Tung^*, Lain-Jong Li^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

87 Citations (Scopus)

56 Downloads (CityUHK Scholars)

Abstract

Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore’s Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm²/Vs (~800 cm²/Vs) at room temperature (15 K), comparable to those from exfoliated flakes. The FET device with a channel length of 100 nm displays a high on-state current of ~400 µA/µm, encouraging the industrialization of 2D materials. © 2022, The Author(s).

Original language	English
Article number	4149
Journal	Nature Communications
Volume	13
Online published	18 Jul 2022
DOIs	https://doi.org/10.1038/s41467-022-31886-0
Publication status	Published - 2022
Externally published	Yes

Publisher's Copyright Statement

This full text is made available under CC-BY 4.0. https://creativecommons.org/licenses/by/4.0/

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Wan, Y., Li, E., Yu, Z., Huang, J.-K., Li, M.-Y., Chou, A.-S., Lee, Y.-T., Lee, C.-J., Hsu, H.-C., Zhan, Q., Aljarb, A., Fu, J.-H., Chiu, S.-P., Wang, X., Lin, J.-J., Chiu, Y.-P., Chang, W.-H., Wang, H., Shi, Y., ... Li, L.-J. (2022). Low-defect-density WS₂ by hydroxide vapor phase deposition. Nature Communications, 13, Article 4149. https://doi.org/10.1038/s41467-022-31886-0

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abstract = "Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore{\textquoteright}s Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm2/Vs (~800 cm2/Vs) at room temperature (15 K), comparable to those from exfoliated flakes. The FET device with a channel length of 100 nm displays a high on-state current of ~400 µA/µm, encouraging the industrialization of 2D materials. {\textcopyright} 2022, The Author(s).",

author = "Yi Wan and En Li and Zhihao Yu and Jing-Kai Huang and Ming-Yang Li and Ang-Sheng Chou and Yi-Te Lee and Chien-Ju Lee and Hung-Chang Hsu and Qin Zhan and Areej Aljarb and Jui-Han Fu and Shao-Pin Chiu and Xinran Wang and Juhn-Jong Lin and Ya-Ping Chiu and Wen-Hao Chang and Han Wang and Yumeng Shi and Nian Lin and Yingchun Cheng and Vincent Tung and Lain-Jong Li",

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T1 - Low-defect-density WS2 by hydroxide vapor phase deposition

AU - Wan, Yi

AU - Li, En

AU - Yu, Zhihao

AU - Huang, Jing-Kai

AU - Li, Ming-Yang

AU - Chou, Ang-Sheng

AU - Lee, Yi-Te

AU - Lee, Chien-Ju

AU - Hsu, Hung-Chang

AU - Zhan, Qin

AU - Aljarb, Areej

AU - Fu, Jui-Han

AU - Chiu, Shao-Pin

AU - Wang, Xinran

AU - Lin, Juhn-Jong

AU - Chiu, Ya-Ping

AU - Chang, Wen-Hao

AU - Wang, Han

AU - Shi, Yumeng

AU - Lin, Nian

AU - Cheng, Yingchun

AU - Tung, Vincent

AU - Li, Lain-Jong

PY - 2022

Y1 - 2022

N2 - Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore’s Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm2/Vs (~800 cm2/Vs) at room temperature (15 K), comparable to those from exfoliated flakes. The FET device with a channel length of 100 nm displays a high on-state current of ~400 µA/µm, encouraging the industrialization of 2D materials. © 2022, The Author(s).

AB - Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore’s Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm2/Vs (~800 cm2/Vs) at room temperature (15 K), comparable to those from exfoliated flakes. The FET device with a channel length of 100 nm displays a high on-state current of ~400 µA/µm, encouraging the industrialization of 2D materials. © 2022, The Author(s).

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