Low Cost Universal High-k Dielectric for Solution Processing and Thermal Evaporation Organic Transistors

Zongrong Wang; Xiaochen Ren; Congcheng Fan; Ya-Huei Chang; Hanying Li; Hongzheng Chen; Shien-Ping Feng; Sanqiang Shi; Paddy K. L. Chan

doi:10.1002/admi.201300119

Low Cost Universal High-k Dielectric for Solution Processing and Thermal Evaporation Organic Transistors

Zongrong Wang, Xiaochen Ren, Congcheng Fan, Ya-Huei Chang, Hanying Li, Hongzheng Chen, Shien-Ping Feng, Sanqiang Shi, Paddy K. L. Chan^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

17 Citations (Scopus)

Abstract

The surface energy of UV-ozone treated BST dielectric is modulated by the storage duration and environment. By carefully controlling the surface energy, this low temperature, solution processed thin film is employed as the insulator for both thermal evaporated and solution processed OFETs. Both OFETs and saturated load inverters show high mobility and gain with an operating voltage less than 3 V.

Original language	English
Article number	1300119
Journal	Advanced Materials Interfaces
Volume	1
Issue number	3
DOIs	https://doi.org/10.1002/admi.201300119
Publication status	Published - 1 Jun 2014
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

high-k dielectric
organic transistors
surface energy
X-ray diffraction

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@article{a381431c337b4702b8dd8dc05d786bb4,

title = "Low Cost Universal High-k Dielectric for Solution Processing and Thermal Evaporation Organic Transistors",

abstract = "The surface energy of UV-ozone treated BST dielectric is modulated by the storage duration and environment. By carefully controlling the surface energy, this low temperature, solution processed thin film is employed as the insulator for both thermal evaporated and solution processed OFETs. Both OFETs and saturated load inverters show high mobility and gain with an operating voltage less than 3 V.",

keywords = "high-k dielectric, organic transistors, surface energy, X-ray diffraction",

author = "Zongrong Wang and Xiaochen Ren and Congcheng Fan and Ya-Huei Chang and Hanying Li and Hongzheng Chen and Shien-Ping Feng and Sanqiang Shi and Chan, {Paddy K. L.}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "2014",

month = jun,

day = "1",

doi = "10.1002/admi.201300119",

language = "English",

volume = "1",

journal = "Advanced Materials Interfaces",

issn = "2196-7350",

publisher = "John Wiley & Sons",

number = "3",

}

TY - JOUR

T1 - Low Cost Universal High-k Dielectric for Solution Processing and Thermal Evaporation Organic Transistors

AU - Wang, Zongrong

AU - Ren, Xiaochen

AU - Fan, Congcheng

AU - Chang, Ya-Huei

AU - Li, Hanying

AU - Chen, Hongzheng

AU - Feng, Shien-Ping

AU - Shi, Sanqiang

AU - Chan, Paddy K. L.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2014/6/1

Y1 - 2014/6/1

N2 - The surface energy of UV-ozone treated BST dielectric is modulated by the storage duration and environment. By carefully controlling the surface energy, this low temperature, solution processed thin film is employed as the insulator for both thermal evaporated and solution processed OFETs. Both OFETs and saturated load inverters show high mobility and gain with an operating voltage less than 3 V.

AB - The surface energy of UV-ozone treated BST dielectric is modulated by the storage duration and environment. By carefully controlling the surface energy, this low temperature, solution processed thin film is employed as the insulator for both thermal evaporated and solution processed OFETs. Both OFETs and saturated load inverters show high mobility and gain with an operating voltage less than 3 V.

KW - high-k dielectric

KW - organic transistors

KW - surface energy

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=84942250576&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84942250576&origin=recordpage

U2 - 10.1002/admi.201300119

DO - 10.1002/admi.201300119

M3 - RGC 21 - Publication in refereed journal

SN - 2196-7350

VL - 1

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

IS - 3

M1 - 1300119

ER -

Low Cost Universal High-k Dielectric for Solution Processing and Thermal Evaporation Organic Transistors

Abstract

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