Low cost ion implantation technique

M. C. Salvadori; F. S. Teixeira; L. G. Sgubin; W. W R Araujo; R. E. Spirin; E. M. Oks; K. M. Yu; I. G. Brown

doi:10.1063/1.4768699

Low cost ion implantation technique

M. C. Salvadori, F. S. Teixeira, L. G. Sgubin, W. W R Araujo, R. E. Spirin, E. M. Oks, K. M. Yu, I. G. Brown

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

9 Citations (Scopus)

Abstract

We describe an approach to ion implantation in which the plasma and its electronics are held at ground potential and the ion beam is formed and injected energetically into a space held at high negative potential. The technique allows considerable savings both economically and technologically, rendering feasible ion implantation applications that might otherwise not be possible for many researchers and laboratories. Here, we describe the device and the results of tests demonstrating Nb implantation at 90 keV ion energy and dose about 2 × 10¹⁶ cm^-2. © 2012 American Institute of Physics.

Original language	English
Article number	224104
Journal	Applied Physics Letters
Volume	101
Issue number	22
DOIs	https://doi.org/10.1063/1.4768699
Publication status	Published - 26 Nov 2012
Externally published	Yes

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title = "Low cost ion implantation technique",

abstract = "We describe an approach to ion implantation in which the plasma and its electronics are held at ground potential and the ion beam is formed and injected energetically into a space held at high negative potential. The technique allows considerable savings both economically and technologically, rendering feasible ion implantation applications that might otherwise not be possible for many researchers and laboratories. Here, we describe the device and the results of tests demonstrating Nb implantation at 90 keV ion energy and dose about 2 × 1016 cm-2. {\textcopyright} 2012 American Institute of Physics.",

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T1 - Low cost ion implantation technique

AU - Salvadori, M. C.

AU - Teixeira, F. S.

AU - Sgubin, L. G.

AU - Araujo, W. W R

AU - Spirin, R. E.

AU - Oks, E. M.

AU - Yu, K. M.

AU - Brown, I. G.

PY - 2012/11/26

Y1 - 2012/11/26

N2 - We describe an approach to ion implantation in which the plasma and its electronics are held at ground potential and the ion beam is formed and injected energetically into a space held at high negative potential. The technique allows considerable savings both economically and technologically, rendering feasible ion implantation applications that might otherwise not be possible for many researchers and laboratories. Here, we describe the device and the results of tests demonstrating Nb implantation at 90 keV ion energy and dose about 2 × 1016 cm-2. © 2012 American Institute of Physics.

AB - We describe an approach to ion implantation in which the plasma and its electronics are held at ground potential and the ion beam is formed and injected energetically into a space held at high negative potential. The technique allows considerable savings both economically and technologically, rendering feasible ion implantation applications that might otherwise not be possible for many researchers and laboratories. Here, we describe the device and the results of tests demonstrating Nb implantation at 90 keV ion energy and dose about 2 × 1016 cm-2. © 2012 American Institute of Physics.

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DO - 10.1063/1.4768699

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 224104

ER -

Low cost ion implantation technique

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