Low cost ion implantation technique

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • M. C. Salvadori
  • F. S. Teixeira
  • L. G. Sgubin
  • W. W R Araujo
  • R. E. Spirin
  • E. M. Oks
  • I. G. Brown

Detail(s)

Original languageEnglish
Article number224104
Journal / PublicationApplied Physics Letters
Volume101
Issue number22
Publication statusPublished - 26 Nov 2012
Externally publishedYes

Abstract

We describe an approach to ion implantation in which the plasma and its electronics are held at ground potential and the ion beam is formed and injected energetically into a space held at high negative potential. The technique allows considerable savings both economically and technologically, rendering feasible ion implantation applications that might otherwise not be possible for many researchers and laboratories. Here, we describe the device and the results of tests demonstrating Nb implantation at 90 keV ion energy and dose about 2 × 1016 cm-2. © 2012 American Institute of Physics.

Citation Format(s)

Low cost ion implantation technique. / Salvadori, M. C.; Teixeira, F. S.; Sgubin, L. G.; Araujo, W. W R; Spirin, R. E.; Oks, E. M.; Yu, K. M.; Brown, I. G.

In: Applied Physics Letters, Vol. 101, No. 22, 224104, 26.11.2012.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review