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Lorentz Force Magnetic Sensor based on a Thin-Film Piezoelectric-on-Silicon Laterally Vibrating Micromechanical Resonator

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

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Abstract

We present a unique MEMS magnetometer based on a laterally-vibrating Thin-film Piezoelectric-on-Silicon (TPoS) resonator. This is the first time that the piezoelectric effect has been explored for the detection of magnetic fields among CMOS-compatible resonant devices. Strong electromechanical coupling provided by the Aluminium Nitride (AlN) layer, enhances sensitivity to allow operation in air as opposed to vacuum. A Lorentz force in the presence of a magnetic field excites the in-plane vibration mode. No amplifier circuit has been used at the output of the magnetometer. Our proof-of-concept device has been operated at a resonant frequency of 33.27 MHz, and shows a measured sensitivity of 0.42 μA/T despite a sub-optimal quality factor (Q) of 432 in air.
Original languageEnglish
Title of host publicationProcedia Engineering
PublisherElsevier Ltd.
Pages654-657
Volume168
DOIs
Publication statusPublished - Sept 2016
Event30th Eurosensors Conference, Eurosensors 2016 - Budapest, Hungary
Duration: 4 Sept 20167 Sept 2016

Publication series

Name
ISSN (Print)1877-7058

Conference

Conference30th Eurosensors Conference, Eurosensors 2016
PlaceHungary
CityBudapest
Period4/09/167/09/16

Research Keywords

  • lateral vibration mode
  • microelectromechanical systems (MEMS)
  • micromachined resonant magnetic field sensor
  • Thin-Film Piezoelectric-on-Silicon (TPoS)

Publisher's Copyright Statement

  • This full text is made available under CC-BY-NC-ND 4.0. https://creativecommons.org/licenses/by-nc-nd/4.0/

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