Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

58 Scopus Citations
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Author(s)

  • Li Ji
  • Xiaohan Li
  • Kai Huang
  • Ye Zhang
  • Jack C. Lee
  • Allen J. Bard
  • Edward T. Yu

Detail(s)

Original languageEnglish
Pages (from-to)127-131
Journal / PublicationNature Materials
Volume16
Issue number1
Publication statusPublished - 1 Jan 2017
Externally publishedYes

Abstract

Silicon-based photoelectrodes for solar fuel production have attracted great interest over the past decade, with the major challenge being silicon's vulnerability to corrosion. A metal-insulator-semiconductor architecture, in which an insulator film serves as a protection layer, can prevent corrosion but must also allow low-resistance carrier transport, generally leading to a trade-off between stability and efficiency. In this work, we propose and demonstrate a general method to decouple the two roles of the insulator by employing localized dielectric breakdown. This approach allows the insulator to be thick, which enhances stability, while enabling low-resistance carrier transport as required for efficiency. This method can be applied to various oxides, such as SiO2 and Al2 O3. In addition, it is suitable for silicon, III-V compounds, and other optical absorbers for both photocathodes and photoanodes. Finally, the thick metal-oxide layer can serve as a thin-film antireflection coating, which increases light absorption efficiency.

Citation Format(s)

Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes. / Ji, Li; Hsu, Hsien-Yi; Li, Xiaohan et al.
In: Nature Materials, Vol. 16, No. 1, 01.01.2017, p. 127-131.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review