Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron x-ray irradiation

Kin Man Yu; W. Walukiewicz; S. Muto; H. C. Jin; J. R. Abelson; C. Clerc; C. J. Glover; M. C. Ridgway

doi:10.1063/1.125325

Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron x-ray irradiation

Kin Man Yu, W. Walukiewicz, S. Muto, H. C. Jin, J. R. Abelson, C. Clerc, C. J. Glover, M. C. Ridgway

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

2 Citations (Scopus)

Abstract

The influence of intense x-ray irradiation on the local bonding structure of Ga dopants in both hydrogen-free (a-Si) and hydrogenated (a-Si:H) amorphous Si thin films has been studied. Prior to x-ray exposure, extended x-ray absorption fine structure measurements revealed that H reduced the static disorder around the Ga atoms in amorphous Si. Thereafter, x-ray irradiation modified the local structure in the a-Si and a-Si:H samples. The Ga coordination number increased from

Original language	English
Pages (from-to)	3282-3284
Journal	Applied Physics Letters
Volume	75
Issue number	21
DOIs	https://doi.org/10.1063/1.125325
Publication status	Published - 22 Nov 1999
Externally published	Yes

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title = "Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron x-ray irradiation",

abstract = "The influence of intense x-ray irradiation on the local bonding structure of Ga dopants in both hydrogen-free (a-Si) and hydrogenated (a-Si:H) amorphous Si thin films has been studied. Prior to x-ray exposure, extended x-ray absorption fine structure measurements revealed that H reduced the static disorder around the Ga atoms in amorphous Si. Thereafter, x-ray irradiation modified the local structure in the a-Si and a-Si:H samples. The Ga coordination number increased from",

author = "Yu, {Kin Man} and W. Walukiewicz and S. Muto and Jin, {H. C.} and Abelson, {J. R.} and C. Clerc and Glover, {C. J.} and Ridgway, {M. C.}",

year = "1999",

month = nov,

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doi = "10.1063/1.125325",

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volume = "75",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron x-ray irradiation

AU - Yu, Kin Man

AU - Walukiewicz, W.

AU - Muto, S.

AU - Jin, H. C.

AU - Abelson, J. R.

AU - Clerc, C.

AU - Glover, C. J.

AU - Ridgway, M. C.

PY - 1999/11/22

Y1 - 1999/11/22

N2 - The influence of intense x-ray irradiation on the local bonding structure of Ga dopants in both hydrogen-free (a-Si) and hydrogenated (a-Si:H) amorphous Si thin films has been studied. Prior to x-ray exposure, extended x-ray absorption fine structure measurements revealed that H reduced the static disorder around the Ga atoms in amorphous Si. Thereafter, x-ray irradiation modified the local structure in the a-Si and a-Si:H samples. The Ga coordination number increased from

AB - The influence of intense x-ray irradiation on the local bonding structure of Ga dopants in both hydrogen-free (a-Si) and hydrogenated (a-Si:H) amorphous Si thin films has been studied. Prior to x-ray exposure, extended x-ray absorption fine structure measurements revealed that H reduced the static disorder around the Ga atoms in amorphous Si. Thereafter, x-ray irradiation modified the local structure in the a-Si and a-Si:H samples. The Ga coordination number increased from

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0013201551&origin=recordpage

U2 - 10.1063/1.125325

DO - 10.1063/1.125325

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 75

SP - 3282

EP - 3284

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron x-ray irradiation

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