Local structure of amorphous GaN1-xAsx semiconductor alloys across the composition range

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • A. X. Levander
  • S. V. Novikov
  • Z. Liliental-Weber
  • C. T. Foxon
  • O. D. Dubon
  • J. Wu
  • W. Walukiewicz

Detail(s)

Original languageEnglish
Article number243505
Journal / PublicationJournal of Applied Physics
Volume113
Issue number24
Publication statusPublished - 28 Jun 2013
Externally publishedYes

Abstract

Typically only dilute (up to ∼10%) highly mismatched alloys can be grown due to the large differences in atomic size and electronegativity of the host and the alloying elements. We have overcome the miscibility gap of the GaN1-xAsx system using low temperature molecular beam epitaxy. In the intermediate composition range (0.10 <x <0.75), the resulting alloys are amorphous. To gain a better understanding of the amorphous structure, the local environment of the As and Ga atoms was investigated using extended x-ray absorption fine structure (EXAFS). The EXAFS analysis shows a high concentration of dangling bonds compared to the crystalline binary endpoint compounds of the alloy system. The disorder parameter was larger for amorphous films compared to crystalline references, but comparable with other amorphous semiconductors. By examining the Ga local environment, the dangling bond density and disorder associated with As-related and N-related bonds could be decoupled. The N-related bonds had a lower dangling bond density and lower disorder. © 2013 AIP Publishing LLC.

Citation Format(s)

Local structure of amorphous GaN1-xAsx semiconductor alloys across the composition range. / Levander, A. X.; Yu, K. M.; Novikov, S. V.; Liliental-Weber, Z.; Foxon, C. T.; Dubon, O. D.; Wu, J.; Walukiewicz, W.

In: Journal of Applied Physics, Vol. 113, No. 24, 243505, 28.06.2013.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal