Local structural changes of ion damaged InGaAs
Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 79-84 |
Journal / Publication | Materials Research Society Symposium - Proceedings |
Volume | 540 |
Publication status | Published - 1999 |
Externally published | Yes |
Conference
Title | Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' |
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City | Boston, MA, USA |
Period | 30 November - 3 December 1998 |
Link(s)
Abstract
Ion damage and amorphization behavior in InGaAs with InAs mole fractions in the range of 0 to 50% are studied. We found that the degree of dynamic annealing increases as the InAs mole fraction increases in the InGaAs when the implantation is carried out at room temperature (RT). Extended x-ray absorption fine structure measurements reveal that in the amorphous state the In-As nearest neighbor distance, RIn-As is very different from that in the crystalline InGaAs and is approx. 0.01 angstrom longer than that in pure crystalline InAs. For RT implanted materials, before a complete amorphous layer is formed, the RIn-As remains close to its crystalline value even when the layer is heavily damaged. A sudden increase of the RIn-As is observed when a complete amorphous layer is formed. The behavior of the measured values of RIn-As for InGaAs implanted with various doses, indicates that at RT the formation of amorphous InGaAs occurs by the simultaneous nucleation of the amorphous phase when the critical free energy in the damage layer is exceeded. At liquid nitrogen temperature, when dynamic annealing is negligible, the RIn-As value increases as the damage in the layer increases, suggesting that the amorphous InGaAs is formed by the accumulation and overlapping of amorphous zones created along the individual ion tracks.
Citation Format(s)
Local structural changes of ion damaged InGaAs. / Yu, Kin Man.
In: Materials Research Society Symposium - Proceedings, Vol. 540, 1999, p. 79-84.
In: Materials Research Society Symposium - Proceedings, Vol. 540, 1999, p. 79-84.
Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal