Abstract
Diamond grain tilting, one of the central problems of diamond heteroepitaxy on silicon (001) surface, has been studied by means of atomic-force and high-resolution electron microscopic observations, and by theoretical simulation using the molecular-orbital method. It is shown that, due to interface mismatch-induced local lattice strain and three-dimensional stacking, diamond nucleation in small areas results naturally in grain tilting. For more perfect heteroepitaxy, nucleation with reduced silicon surface damage and over relatively large lateral domains is required.
| Original language | English |
|---|---|
| Pages (from-to) | 15351-15354 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 58 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 15 Dec 1998 |
Publisher's Copyright Statement
- COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: Jiang, X., Zhang, R. Q., Yu, G., & Lee, S. T. (1998). Local strain in interface: Origin of grain tilting in diamond (001)/silicon (001) heteroepitaxy. Physical Review B - Condensed Matter and Materials Physics, 58(23), 15351-15354. https://doi.org/10.1103/PhysRevB.58.15351. The copyright of this article is owned by American Physical Society.
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