Local strain in interface : Origin of grain tilting in diamond (001)/silicon (001) heteroepitaxy
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 15351-15354 |
| Journal / Publication | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 58 |
| Issue number | 23 |
| Publication status | Published - 15 Dec 1998 |
Link(s)
Abstract
Diamond grain tilting, one of the central problems of diamond heteroepitaxy on silicon (001) surface, has been studied by means of atomic-force and high-resolution electron microscopic observations, and by theoretical simulation using the molecular-orbital method. It is shown that, due to interface mismatch-induced local lattice strain and three-dimensional stacking, diamond nucleation in small areas results naturally in grain tilting. For more perfect heteroepitaxy, nucleation with reduced silicon surface damage and over relatively large lateral domains is required.
Citation Format(s)
Local strain in interface : Origin of grain tilting in diamond (001)/silicon (001) heteroepitaxy. / Jiang, X.; Zhang, R. Q.; Yu, G.; Lee, S. T.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 58, No. 23, 15.12.1998, p. 15351-15354.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
