Local strain in interface : Origin of grain tilting in diamond (001)/silicon (001) heteroepitaxy

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Detail(s)

Original languageEnglish
Pages (from-to)15351-15354
Journal / PublicationPhysical Review B - Condensed Matter and Materials Physics
Volume58
Issue number23
Publication statusPublished - 15 Dec 1998

Abstract

Diamond grain tilting, one of the central problems of diamond heteroepitaxy on silicon (001) surface, has been studied by means of atomic-force and high-resolution electron microscopic observations, and by theoretical simulation using the molecular-orbital method. It is shown that, due to interface mismatch-induced local lattice strain and three-dimensional stacking, diamond nucleation in small areas results naturally in grain tilting. For more perfect heteroepitaxy, nucleation with reduced silicon surface damage and over relatively large lateral domains is required.