LOCAL SOURCE PLASMA ION IMPLANTATION

X. B. Tian; H. F. Jiang; J. T. Cui; S. Q. Yang; Ricky K. F. Fu; Paul K. Chu

doi:10.1109/PLASMA.2005.359138

LOCAL SOURCE PLASMA ION IMPLANTATION

X. B. Tian, H. F. Jiang, J. T. Cui, S. Q. Yang, Ricky K. F. Fu, Paul K. Chu

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Summary form only given. During conventional plasma ion implantation, the plasmas are generated uniformly in the vacuum chamber and then the target to be treated is negatively biased. Consequently, all the exposed surfaces are implanted simultaneously. In this paper, a novel plasma ion implantation technique referred to as local source plasma ion implantation is presented. The plasma is produced only near the surfaces to be implanted. The plasma is sustained using the hollow cathode radio-frequency discharge mode with or without assistance of external magnetic field. In conjunction with the previously proposed concept of non-uniform plasma ion implantation, the technique is more suitable for implantation of local areas, for instance, local part of a large component, side wall of trench, inner surfaces of cylindrical bore, etc. The paper focuses on the plasma dynamics and influence of the processing parameters on the implantation behavior

Original language	English
Title of host publication	IEEE Conference Record - Abstracts - 2005 IEEE International Conference on Plasma Science
Publisher	IEEE
Pages	148
ISBN (Print)	0-7803-9300-7
DOIs	https://doi.org/10.1109/PLASMA.2005.359138
Publication status	Published - Jun 2005
Event	2005 IEEE International Conference on Plasma Science (ICOPS 2005) - Monterey, United States Duration: 20 Jun 2005 → 23 Jun 2005

Conference

Conference	2005 IEEE International Conference on Plasma Science (ICOPS 2005)
Abbreviated title	ICOPS 2005
Place	United States
City	Monterey
Period	20/06/05 → 23/06/05

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@inproceedings{2de00b61a79b42e9a42a46b56fb7e3f7,

title = "LOCAL SOURCE PLASMA ION IMPLANTATION",

abstract = "Summary form only given. During conventional plasma ion implantation, the plasmas are generated uniformly in the vacuum chamber and then the target to be treated is negatively biased. Consequently, all the exposed surfaces are implanted simultaneously. In this paper, a novel plasma ion implantation technique referred to as local source plasma ion implantation is presented. The plasma is produced only near the surfaces to be implanted. The plasma is sustained using the hollow cathode radio-frequency discharge mode with or without assistance of external magnetic field. In conjunction with the previously proposed concept of non-uniform plasma ion implantation, the technique is more suitable for implantation of local areas, for instance, local part of a large component, side wall of trench, inner surfaces of cylindrical bore, etc. The paper focuses on the plasma dynamics and influence of the processing parameters on the implantation behavior",

author = "Tian, {X. B.} and Jiang, {H. F.} and Cui, {J. T.} and Yang, {S. Q.} and Fu, {Ricky K. F.} and Chu, {Paul K.}",

year = "2005",

month = jun,

doi = "10.1109/PLASMA.2005.359138",

language = "English",

isbn = "0-7803-9300-7",

pages = "148",

booktitle = "IEEE Conference Record - Abstracts - 2005 IEEE International Conference on Plasma Science",

publisher = "IEEE",

address = "United States",

note = "2005 IEEE International Conference on Plasma Science (ICOPS 2005), ICOPS 2005 ; Conference date: 20-06-2005 Through 23-06-2005",

}

TY - GEN

T1 - LOCAL SOURCE PLASMA ION IMPLANTATION

AU - Tian, X. B.

AU - Jiang, H. F.

AU - Cui, J. T.

AU - Yang, S. Q.

AU - Fu, Ricky K. F.

AU - Chu, Paul K.

PY - 2005/6

Y1 - 2005/6

N2 - Summary form only given. During conventional plasma ion implantation, the plasmas are generated uniformly in the vacuum chamber and then the target to be treated is negatively biased. Consequently, all the exposed surfaces are implanted simultaneously. In this paper, a novel plasma ion implantation technique referred to as local source plasma ion implantation is presented. The plasma is produced only near the surfaces to be implanted. The plasma is sustained using the hollow cathode radio-frequency discharge mode with or without assistance of external magnetic field. In conjunction with the previously proposed concept of non-uniform plasma ion implantation, the technique is more suitable for implantation of local areas, for instance, local part of a large component, side wall of trench, inner surfaces of cylindrical bore, etc. The paper focuses on the plasma dynamics and influence of the processing parameters on the implantation behavior

AB - Summary form only given. During conventional plasma ion implantation, the plasmas are generated uniformly in the vacuum chamber and then the target to be treated is negatively biased. Consequently, all the exposed surfaces are implanted simultaneously. In this paper, a novel plasma ion implantation technique referred to as local source plasma ion implantation is presented. The plasma is produced only near the surfaces to be implanted. The plasma is sustained using the hollow cathode radio-frequency discharge mode with or without assistance of external magnetic field. In conjunction with the previously proposed concept of non-uniform plasma ion implantation, the technique is more suitable for implantation of local areas, for instance, local part of a large component, side wall of trench, inner surfaces of cylindrical bore, etc. The paper focuses on the plasma dynamics and influence of the processing parameters on the implantation behavior

U2 - 10.1109/PLASMA.2005.359138

DO - 10.1109/PLASMA.2005.359138

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0-7803-9300-7

SP - 148

BT - IEEE Conference Record - Abstracts - 2005 IEEE International Conference on Plasma Science

PB - IEEE

T2 - 2005 IEEE International Conference on Plasma Science (ICOPS 2005)

Y2 - 20 June 2005 through 23 June 2005

ER -

LOCAL SOURCE PLASMA ION IMPLANTATION

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