TY - JOUR
T1 - Local characterization of compositionally graded Pb(Zr,Ti)O3 thin films by scanning force microscope
AU - Zeng, H. R.
AU - Li, G. R.
AU - Yin, Q. R.
AU - Xu, Z. K.
PY - 2003/5/25
Y1 - 2003/5/25
N2 - Compositionally graded PZT thin film was prepared by a sol-gel technique. Nanoscale domain structure and polarization reversal behavior in an individual grain were investigated by means of scanning force microscopy (SFM) in piezoresponse mode. Domain as small as 30 nm in size was visualized. The observed complex domain contrast was attributed to the crystallographic orientation of the grains and to the built-in potential difference in compositionally graded PZT thin film under an ac field. The built-in potential difference, defect and space charge gave rise to strong domain pinning behavior during the polarization reversal. © 2002 Elsevier Science B.V. All rights reserved.
AB - Compositionally graded PZT thin film was prepared by a sol-gel technique. Nanoscale domain structure and polarization reversal behavior in an individual grain were investigated by means of scanning force microscopy (SFM) in piezoresponse mode. Domain as small as 30 nm in size was visualized. The observed complex domain contrast was attributed to the crystallographic orientation of the grains and to the built-in potential difference in compositionally graded PZT thin film under an ac field. The built-in potential difference, defect and space charge gave rise to strong domain pinning behavior during the polarization reversal. © 2002 Elsevier Science B.V. All rights reserved.
KW - Graded ferroelectric thin film
KW - Nanoscale domain
KW - Scanning force microscope
UR - http://www.scopus.com/inward/record.url?scp=0037701516&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0037701516&origin=recordpage
U2 - 10.1016/S0921-5107(02)00459-2
DO - 10.1016/S0921-5107(02)00459-2
M3 - RGC 21 - Publication in refereed journal
SN - 0921-5107
VL - 99
SP - 234
EP - 237
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 1-3
T2 - Advanced Electronic-ceramic Materials. Proceedings of the 8th IUMRS-ICEM 2002
Y2 - 10 June 2002 through 14 June 2002
ER -