Lithium ion trapping mechanism of SiO2 in LiCoO2 based memristors

Qi Hu; Runmiao Li; Xinjiang Zhang; Qin Gao; Mei Wang; Hongliang Shi; Zhisong Xiao; Paul K. Chu; Anping Huang

doi:10.1038/s41598-019-41508-3

Lithium ion trapping mechanism of SiO₂in LiCoO₂ based memristors

Qi Hu (Co-first Author)
, Runmiao Li (Co-first Author)
, Xinjiang Zhang
, Qin Gao
, Mei Wang
, Hongliang Shi
, Zhisong Xiao
, Paul K. Chu
, Anping Huang^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

23 Citations (Scopus)

54 Downloads (CityUHK Scholars)

Abstract

Pt/LiCoO₂/SiO₂/Si stacks with different SiO₂ thicknesses are fabricated and the influence of SiO₂on memristive behavior is investigated. It is demonstrated that SiO₂ can serve as Li ion trapping layer benefiting device retention, and the thickness of SiO₂ must be controlled to avoid large SET voltage and state instability. Simulation model based on Nernst potential and diffusion potential is postulated for electromotive force in LiCoO₂ based memristors. The simulation results show that SiO₂ trapping layer decreases the total electromotive field of device and thereby prevents Li ions from migrating back to LiCoO₂. This model shows a good agreement with experimental data and reveals the Li ion trapping mechanism of SiO₂ in LiCoO₂ based memristors.

Original language	English
Article number	5081
Journal	Scientific Reports
Volume	9
Online published	25 Mar 2019
DOIs	https://doi.org/10.1038/s41598-019-41508-3
Publication status	Published - 2019

Funding

This research was supported by the National Natural Science Foundation of China (Grant Nos 51872010, 11574017, 11574021 and 11604007), Special Foundation of Beijing Municipal Science & Technology Commission (Grant No. Z161100000216149), and City University of Hong Kong Strategic Research Grant (SRG) No. 7004644.

Research Keywords

METAL TRANSITION

Publisher's Copyright Statement

This full text is made available under CC-BY 4.0. https://creativecommons.org/licenses/by/4.0/

Access Output

10.1038/s41598-019-41508-3

29306172.pdfFinal Published version, 1.29 MBLicence: CC BY

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@article{f1979b6aaae0473fb8f65bc3bc416e82,

title = "Lithium ion trapping mechanism of SiO2 in LiCoO2 based memristors",

abstract = "Pt/LiCoO2/SiO2/Si stacks with different SiO2 thicknesses are fabricated and the influence of SiO2 on memristive behavior is investigated. It is demonstrated that SiO2 can serve as Li ion trapping layer benefiting device retention, and the thickness of SiO2 must be controlled to avoid large SET voltage and state instability. Simulation model based on Nernst potential and diffusion potential is postulated for electromotive force in LiCoO2 based memristors. The simulation results show that SiO2 trapping layer decreases the total electromotive field of device and thereby prevents Li ions from migrating back to LiCoO2. This model shows a good agreement with experimental data and reveals the Li ion trapping mechanism of SiO2 in LiCoO2 based memristors.",

keywords = "METAL TRANSITION",

author = "Qi Hu and Runmiao Li and Xinjiang Zhang and Qin Gao and Mei Wang and Hongliang Shi and Zhisong Xiao and Chu, \{Paul K.\} and Anping Huang",

year = "2019",

doi = "10.1038/s41598-019-41508-3",

language = "English",

volume = "9",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - Lithium ion trapping mechanism of SiO2 in LiCoO2 based memristors

AU - Hu, Qi

AU - Li, Runmiao

AU - Zhang, Xinjiang

AU - Gao, Qin

AU - Wang, Mei

AU - Shi, Hongliang

AU - Xiao, Zhisong

AU - Chu, Paul K.

AU - Huang, Anping

PY - 2019

Y1 - 2019

N2 - Pt/LiCoO2/SiO2/Si stacks with different SiO2 thicknesses are fabricated and the influence of SiO2 on memristive behavior is investigated. It is demonstrated that SiO2 can serve as Li ion trapping layer benefiting device retention, and the thickness of SiO2 must be controlled to avoid large SET voltage and state instability. Simulation model based on Nernst potential and diffusion potential is postulated for electromotive force in LiCoO2 based memristors. The simulation results show that SiO2 trapping layer decreases the total electromotive field of device and thereby prevents Li ions from migrating back to LiCoO2. This model shows a good agreement with experimental data and reveals the Li ion trapping mechanism of SiO2 in LiCoO2 based memristors.

AB - Pt/LiCoO2/SiO2/Si stacks with different SiO2 thicknesses are fabricated and the influence of SiO2 on memristive behavior is investigated. It is demonstrated that SiO2 can serve as Li ion trapping layer benefiting device retention, and the thickness of SiO2 must be controlled to avoid large SET voltage and state instability. Simulation model based on Nernst potential and diffusion potential is postulated for electromotive force in LiCoO2 based memristors. The simulation results show that SiO2 trapping layer decreases the total electromotive field of device and thereby prevents Li ions from migrating back to LiCoO2. This model shows a good agreement with experimental data and reveals the Li ion trapping mechanism of SiO2 in LiCoO2 based memristors.

KW - METAL TRANSITION

UR - https://www.scopus.com/pages/publications/85063592325

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85063592325&origin=recordpage

U2 - 10.1038/s41598-019-41508-3

DO - 10.1038/s41598-019-41508-3

M3 - RGC 21 - Publication in refereed journal

C2 - 30911041

SN - 2045-2322

VL - 9

JO - Scientific Reports

JF - Scientific Reports

M1 - 5081

ER -