Lithium ion trapping mechanism of SiO2 in LiCoO2 based memristors

Qi Hu; Runmiao Li; Xinjiang Zhang; Qin Gao; Mei Wang; Hongliang Shi; Zhisong Xiao; Paul K. Chu; Anping Huang

doi:10.1038/s41598-019-41508-3

Lithium ion trapping mechanism of SiO₂in LiCoO₂ based memristors

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

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2 Scopus Citations

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Author(s)

Qi Hu
Runmiao Li
Xinjiang Zhang
Qin Gao
Mei Wang
Hongliang Shi
Zhisong Xiao
Anping Huang

Related Research Unit(s)

Detail(s)

Original language	English
Article number	5081
Journal / Publication	Scientific Reports
Volume	9
Early online date	25 Mar 2019
Publication status	Published - 2019

Link(s)

DOI	DOI https://doi.org/10.1038/s41598-019-41508-3 Final Published version
	Check@CityULib
Attachment(s)	Documents Final Published Version Final Published version, 1 MB, PDF Publisher's Copyright Statement This full text is made available under CC-BY 4.0. https://creativecommons.org/licenses/by/4.0/
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-85063592325&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(f1979b6a-aae0-473f-b8f6-5bc3bc416e82).html

Abstract

Pt/LiCoO₂/SiO₂/Si stacks with different SiO₂ thicknesses are fabricated and the influence of SiO₂on memristive behavior is investigated. It is demonstrated that SiO₂ can serve as Li ion trapping layer benefiting device retention, and the thickness of SiO₂ must be controlled to avoid large SET voltage and state instability. Simulation model based on Nernst potential and diffusion potential is postulated for electromotive force in LiCoO₂ based memristors. The simulation results show that SiO₂ trapping layer decreases the total electromotive field of device and thereby prevents Li ions from migrating back to LiCoO₂. This model shows a good agreement with experimental data and reveals the Li ion trapping mechanism of SiO₂ in LiCoO₂ based memristors.

Research Area(s)

METAL TRANSITION

Citation Format(s)

[ RIS ] [ BibTeX ]

Lithium ion trapping mechanism of SiO₂in LiCoO₂ based memristors. / Hu, Qi; Li, Runmiao; Zhang, Xinjiang; Gao, Qin; Wang, Mei; Shi, Hongliang; Xiao, Zhisong; Chu, Paul K.; Huang, Anping.

In: Scientific Reports, Vol. 9, 5081, 2019.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

Hu, Q, Li, R, Zhang, X, Gao, Q, Wang, M, Shi, H, Xiao, Z, Chu, PK & Huang, A 2019, 'Lithium ion trapping mechanism of SiO₂in LiCoO₂ based memristors' Scientific Reports, vol. 9, 5081. https://doi.org/10.1038/s41598-019-41508-3

Hu, Q., Li, R., Zhang, X., Gao, Q., Wang, M., Shi, H., ... Huang, A. (2019). Lithium ion trapping mechanism of SiO₂in LiCoO₂ based memristors. Scientific Reports, 9, [5081]. https://doi.org/10.1038/s41598-019-41508-3

Hu Q, Li R, Zhang X, Gao Q, Wang M, Shi H et al. Lithium ion trapping mechanism of SiO₂in LiCoO₂ based memristors. Scientific Reports. 2019;9. 5081. https://doi.org/10.1038/s41598-019-41508-3

Hu, Qi ; Li, Runmiao ; Zhang, Xinjiang ; Gao, Qin ; Wang, Mei ; Shi, Hongliang ; Xiao, Zhisong ; Chu, Paul K. ; Huang, Anping. / Lithium ion trapping mechanism of SiO₂in LiCoO₂ based memristors. In: Scientific Reports. 2019 ; Vol. 9.

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