Lithium ion trapping mechanism of SiO2 in LiCoO2 based memristors
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review
Author(s)
Related Research Unit(s)
Detail(s)
| Original language | English |
|---|---|
| Article number | ARTN 5081 |
| Journal / Publication | Scientific Reports |
| Volume | 9 |
| Early online date | 25 Mar 2019 |
| Publication status | Published - 2019 |
Link(s)
| DOI | DOI |
|---|---|
| Permanent Link | https://scholars.cityu.edu.hk/en/publications/publication(f1979b6a-aae0-473f-b8f6-5bc3bc416e82).html |
Abstract
Pt/LiCoO2/SiO2/Si stacks with different SiO2 thicknesses are fabricated and the influence of SiO2 on memristive behavior is investigated. It is demonstrated that SiO2 can serve as Li ion trapping layer benefiting device retention, and the thickness of SiO2 must be controlled to avoid large SET voltage and state instability. Simulation model based on Nernst potential and diffusion potential is postulated for electromotive force in LiCoO2 based memristors. The simulation results show that SiO2 trapping layer decreases the total electromotive field of device and thereby prevents Li ions from migrating back to LiCoO2. This model shows a good agreement with experimental data and reveals the Li ion trapping mechanism of SiO2 in LiCoO2 based memristors.
Research Area(s)
- METAL TRANSITION
Citation Format(s)
Lithium ion trapping mechanism of SiO2 in LiCoO2 based memristors. / Hu, Qi; Li, Runmiao; Zhang, Xinjiang; Gao, Qin; Wang, Mei; Shi, Hongliang; Xiao, Zhisong; Chu, Paul K.; Huang, Anping.
In: Scientific Reports, Vol. 9, ARTN 5081, 2019.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review
