Lithium ion trapping mechanism of SiO2 in LiCoO2 based memristors

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

1 Scopus Citations
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Author(s)

  • Qi Hu
  • Runmiao Li
  • Xinjiang Zhang
  • Qin Gao
  • Mei Wang
  • Hongliang Shi
  • Zhisong Xiao
  • Anping Huang

Detail(s)

Original languageEnglish
Article number5081
Journal / PublicationScientific Reports
Volume9
Early online date25 Mar 2019
Publication statusPublished - 2019

Link(s)

Abstract

Pt/LiCoO2/SiO2/Si stacks with different SiO2 thicknesses are fabricated and the influence of SiO2 on memristive behavior is investigated. It is demonstrated that SiO2 can serve as Li ion trapping layer benefiting device retention, and the thickness of SiO2 must be controlled to avoid large SET voltage and state instability. Simulation model based on Nernst potential and diffusion potential is postulated for electromotive force in LiCoO2 based memristors. The simulation results show that SiO2 trapping layer decreases the total electromotive field of device and thereby prevents Li ions from migrating back to LiCoO2. This model shows a good agreement with experimental data and reveals the Li ion trapping mechanism of SiO2 in LiCoO2 based memristors.

Research Area(s)

  • METAL TRANSITION

Citation Format(s)

Lithium ion trapping mechanism of SiO2 in LiCoO2 based memristors. / Hu, Qi; Li, Runmiao; Zhang, Xinjiang; Gao, Qin; Wang, Mei; Shi, Hongliang; Xiao, Zhisong; Chu, Paul K.; Huang, Anping.

In: Scientific Reports, Vol. 9, 5081, 2019.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

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