Linearised 2GHz amplifier for IMT-2000

Research output: Journal Publications and ReviewsRGC 22 - Publication in policy or professional journal

2 Scopus Citations
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Detail(s)

Original languageEnglish
Pages (from-to)245-248
Journal / PublicationIEEE Vehicular Technology Conference
Volume1
Publication statusPublished - 2000

Conference

TitleVTC2000: 51st Vehicular Technology Conference 'Shaping History Through Mobile Technologies'
CityTokyo, Jpn
Period15 - 18 May 2000

Abstract

Under large signal conditions, amplifiers using GaAs FETs have high input non-linearity due to the non-linear gate-to-source capacitance Cgs which will result in AM-PM distortion. The method presented here uses a parallel connected varactor diode to linearise a GaAs FET amplifier. A reduction of 10dB in spectral regrowth at 2GHz is achieved with a low loss. This method is suitable for circuit miniaturisation and can be applied to amplifiers for IMT-2000.

Citation Format(s)

Linearised 2GHz amplifier for IMT-2000. / Yu, Chi Sun; Chan, Wing Shing; Chan, Wing Le.
In: IEEE Vehicular Technology Conference, Vol. 1, 2000, p. 245-248.

Research output: Journal Publications and ReviewsRGC 22 - Publication in policy or professional journal