Abstract
Under large signal conditions, amplifiers using GaAs FETs have high input non-linearity due to the non-linear gate-to-source capacitance Cgs which will result in AM-PM distortion. The method presented here uses a parallel connected varactor diode to linearise a GaAs FET amplifier. A reduction of 10dB in spectral regrowth at 2GHz is achieved with a low loss. This method is suitable for circuit miniaturisation and can be applied to amplifiers for IMT-2000.
| Original language | English |
|---|---|
| Pages (from-to) | 245-248 |
| Journal | IEEE Vehicular Technology Conference |
| Volume | 1 |
| DOIs | |
| Publication status | Published - 2000 |
| Event | VTC2000: 51st Vehicular Technology Conference 'Shaping History Through Mobile Technologies' - Tokyo, Jpn Duration: 15 May 2000 → 18 May 2000 |
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