Light-Emitting β-Fe(SixGe1-x)2 Nanodots on Si0.8Ge0.2 Substrate

Y. L. Chueh; L. J. Chou; S. L. Cheng; J. H. He; W. W. Wu; L. J. Chen

doi:10.1149/1.1896468

Light-Emitting β-Fe(Si_xGe_1-x)₂ Nanodots on Si_0.8Ge_0.2 Substrate

Y. L. Chueh, L. J. Chou^*, S. L. Cheng, J. H. He, W. W. Wu, L. J. Chen

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Abstract

Uniformly distributed dome-shaped β-Fe(Si_xGe_1-x)₂ nanodots synthesized on Si_0.8Ge _0.2 are reported. A photoluminescence peak at 0.82 eV (1510 nm) is observed at 20 K for β-Fe(Si_xGe_1-x)₂ nanodots grown epitaxial on Si_0.8Ge_0.2 substrate. © 2005 The Electrochemical Society. All rights reserved.

Original language	English
Article number	G137
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	6
Online published	18 Apr 2005
DOIs	https://doi.org/10.1149/1.1896468
Publication status	Published - 2005
Externally published	Yes

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@article{51387919df8740bd8766ce6842522047,

title = "Light-Emitting β-Fe(SixGe1-x)2 Nanodots on Si0.8Ge0.2 Substrate",

abstract = "Uniformly distributed dome-shaped β-Fe(SixGe1-x)2 nanodots synthesized on Si0.8Ge 0.2 are reported. A photoluminescence peak at 0.82 eV (1510 nm) is observed at 20 K for β-Fe(SixGe1-x)2 nanodots grown epitaxial on Si0.8Ge0.2 substrate. {\textcopyright} 2005 The Electrochemical Society. All rights reserved.",

author = "Chueh, {Y. L.} and Chou, {L. J.} and Cheng, {S. L.} and He, {J. H.} and Wu, {W. W.} and Chen, {L. J.}",

year = "2005",

doi = "10.1149/1.1896468",

language = "English",

volume = "8",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "6",

}

TY - JOUR

T1 - Light-Emitting β-Fe(SixGe1-x)2 Nanodots on Si0.8Ge0.2 Substrate

AU - Chueh, Y. L.

AU - Chou, L. J.

AU - Cheng, S. L.

AU - He, J. H.

AU - Wu, W. W.

AU - Chen, L. J.

PY - 2005

Y1 - 2005

N2 - Uniformly distributed dome-shaped β-Fe(SixGe1-x)2 nanodots synthesized on Si0.8Ge 0.2 are reported. A photoluminescence peak at 0.82 eV (1510 nm) is observed at 20 K for β-Fe(SixGe1-x)2 nanodots grown epitaxial on Si0.8Ge0.2 substrate. © 2005 The Electrochemical Society. All rights reserved.

AB - Uniformly distributed dome-shaped β-Fe(SixGe1-x)2 nanodots synthesized on Si0.8Ge 0.2 are reported. A photoluminescence peak at 0.82 eV (1510 nm) is observed at 20 K for β-Fe(SixGe1-x)2 nanodots grown epitaxial on Si0.8Ge0.2 substrate. © 2005 The Electrochemical Society. All rights reserved.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-20844438731&origin=recordpage

U2 - 10.1149/1.1896468

DO - 10.1149/1.1896468

M3 - RGC 21 - Publication in refereed journal

SN - 1099-0062

VL - 8

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 6

M1 - G137

ER -