TY - JOUR
T1 - Light emission and spin-polarised hole injection in InAs/GaAs quantum dot heterostructures with Schottky contact
AU - Baidus, N. V.
AU - Vasilevskiy, M. I.
AU - Khazanova, S. V.
AU - Zvonkov, B. N.
AU - Van Der Meulen, H. P.
AU - Calleja, J. M.
AU - Viña, L.
PY - 2012/4
Y1 - 2012/4
N2 - We demonstrate the feasibility to obtain electroluminescence (EL), up to room temperature, from InGaAs self-assembled quantum dots (QDs) included in a forward-biased Schottky diode. Moreover, using a ferromagnet (FM) as the contact layer, sizable circular polarization of the EL emission in the presence of an external magnetic field is obtained. A resonant behavior of the degree of circular polarization (P) as a function of the applied voltage (V), for a given value of magnetic field, is observed. We explain our findings using a model including tunneling of (spin-polarised) holes through the metal-semiconductor interface, transport in the near-surface region of the heterostructure and out-of-equilibrium statistics of the injected carriers occupying the available states in the QD heterostructure. In particular, the resonant P(V) dependence is related to the splitting of the quasi-Fermi level for two spin orientations in the FM. © Europhysics Letters Association, 2012.
AB - We demonstrate the feasibility to obtain electroluminescence (EL), up to room temperature, from InGaAs self-assembled quantum dots (QDs) included in a forward-biased Schottky diode. Moreover, using a ferromagnet (FM) as the contact layer, sizable circular polarization of the EL emission in the presence of an external magnetic field is obtained. A resonant behavior of the degree of circular polarization (P) as a function of the applied voltage (V), for a given value of magnetic field, is observed. We explain our findings using a model including tunneling of (spin-polarised) holes through the metal-semiconductor interface, transport in the near-surface region of the heterostructure and out-of-equilibrium statistics of the injected carriers occupying the available states in the QD heterostructure. In particular, the resonant P(V) dependence is related to the splitting of the quasi-Fermi level for two spin orientations in the FM. © Europhysics Letters Association, 2012.
UR - http://www.scopus.com/inward/record.url?scp=84860532364&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84860532364&origin=recordpage
U2 - 10.1209/0295-5075/98/27012
DO - 10.1209/0295-5075/98/27012
M3 - RGC 21 - Publication in refereed journal
SN - 0295-5075
VL - 98
JO - EPL
JF - EPL
IS - 2
M1 - 27012
ER -