Layer-by-layer-assembled reduced graphene oxide/gold nanoparticle hybrid double-floating-gate structure for low-voltage flexible flash memory

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Overview

170 Scopus Citations

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Author(s)

Su-Ting Han
Ye Zhou
Chundong Wang
Lifang He

Related Research Unit(s)

Centre of Super-Diamond and Advanced Films

Detail(s)

Original language	English
Pages (from-to)	872-877
Journal / Publication	Advanced Materials
Volume	25
Issue number	6
Publication status	Published - 13 Feb 2013

Link(s)

DOI	DOI https://doi.org/10.1002/adma.201203509 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84873627210&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(679ed6bd-8cdd-41b3-bafa-e8aea84ecfe6).html

Abstract

A hybrid double-floating-gate flexible memory device by utilizing an rGO-sheet monolayer and a Au NP array as upper and lower floating gates is reported. The rGO buffer layer acts as a charge-trapping layer and introduces an energy barrier between the Au NP lower floating gate and the channel. The proposed memory device demonstrates a strong improvement in both field-effect-transistor (FET) and memory characteristics. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Research Area(s)

flexible flash memory, gold nanoparticles, hybrid double floating gates, low voltage, reduced graphene oxide

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Publication fingerprints text

Monolayers Material Science

Charge Trapping Material Science

Buffer Layer Material Science

Field Effect Transi... Material Science

Reduced Graphene Ox... Material Science

Gold Nanoparticles Material Science

Flash Memory Engineering

Floating Gate Engineering

Field-Effect Transi... Engineering

Energy Barrier Engineering

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Citation Format(s)

[ RIS ] [ BibTeX ]

Layer-by-layer-assembled reduced graphene oxide/gold nanoparticle hybrid double-floating-gate structure for low-voltage flexible flash memory. / Han, Su-Ting; Zhou, Ye; Wang, Chundong et al.
In: Advanced Materials, Vol. 25, No. 6, 13.02.2013, p. 872-877.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Han, S-T, Zhou, Y, Wang, C, He, L, Zhang, W & Roy, VAL 2013, 'Layer-by-layer-assembled reduced graphene oxide/gold nanoparticle hybrid double-floating-gate structure for low-voltage flexible flash memory', Advanced Materials, vol. 25, no. 6, pp. 872-877. https://doi.org/10.1002/adma.201203509

Han, S.-T., Zhou, Y., Wang, C., He, L., Zhang, W., & Roy, V. A. L. (2013). Layer-by-layer-assembled reduced graphene oxide/gold nanoparticle hybrid double-floating-gate structure for low-voltage flexible flash memory. Advanced Materials, 25(6), 872-877. https://doi.org/10.1002/adma.201203509

Han ST, Zhou Y, Wang C, He L, Zhang W , Roy VAL. Layer-by-layer-assembled reduced graphene oxide/gold nanoparticle hybrid double-floating-gate structure for low-voltage flexible flash memory. Advanced Materials. 2013 Feb 13;25(6):872-877. doi: 10.1002/adma.201203509

Han, Su-Ting ; Zhou, Ye ; Wang, Chundong et al. / Layer-by-layer-assembled reduced graphene oxide/gold nanoparticle hybrid double-floating-gate structure for low-voltage flexible flash memory. In: Advanced Materials. 2013 ; Vol. 25, No. 6. pp. 872-877.