Layer thinning and etching of mechanically exfoliated MoS₂ nanosheets by thermal annealing in air

A  simple thermal annealing method for layer thinning and etching of mechanically exfoliated MoS₂ nanosheets in air is reported. Using this method, single‐layer (1L) MoS₂ nanosheets are achieved after the thinning of MoS₂ nanosheets from double‐layer (2L) to quadri‐layer (4L) at 330 °C. The as‐prepared 1L MoS₂ nanosheet shows comparable optical and electrical properties with the mechanically exfoliated, pristine one. In addition, for the first time, the MoS₂ mesh with high‐density of triangular pits is also fabricated at 330 °C, which might arise from the anisotropic etching of the active MoS₂ edge sites. As a result of thermal annealing in air, the thinning of MoS₂ nanosheet is possible due to its oxidation to form MoO₃. Importantly, the MoO₃ fragments on the top of thinned MoS₂ layer induces the hole injection, resulting in the p‐type channel in fabricated field‐effect transistors.