LaVA: An Effective Layer Variation Aware Bad Block Management for 3D CT NAND Flash

Shuhan Bai; You Zhou; Fei Wu; Changsheng Xie; Tei-Wei Kuo; Chun Jason Xue

LaVA: An Effective Layer Variation Aware Bad Block Management for 3D CT NAND Flash

Shuhan Bai, You Zhou, Fei Wu^*, Changsheng Xie, Tei-Wei Kuo, Chun Jason Xue

^*Corresponding author for this work

Department of Computer Science

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

1 Citation (Scopus)

Abstract

3D NAND flash with charge trap (CT) technology has been developed by stacking multiple layers vertically to boost storage capacity while ensuring reliability and scalability. One of its critical characteristics is the large endurance variation among and inside blocks and layers. With this feature, traditional bad block management (BBM), which determines block lifetime by the page with worst endurance, results in underutilization of solid state drive (SSD) usage. In this paper, a layer variation aware and fault-tolerant bad block management, named LaVA, is proposed to prolong the lifetime of 3D NAND flash storage. The relevant layer, instead of the entire flash block, is discarded at a finer granularity when a page failure is encountered. Experimental results based on real-world workloads show that LaVA can significantly extend the endurance of 3D CT NAND flash (30.6%-62.2%) with a small performance degradation (less than 10% increase of tail I/Oresponse time), compared to the conventional technique. © 2024 EDAA.

Original language	English
Title of host publication	2024 Design, Automation & Test in Europe Conference & Exhibition (DATE)
Subtitle of host publication	Proceedings
Publisher	IEEE
ISBN (Electronic)	979-8-3503-4860-6, 978-3-9819263-8-5
ISBN (Print)	979-8-3503-4860-6
Publication status	Published - 2024
Event	27th Design, Automation and Test in Europe Conference (DATE 2024) - Palacio De Congresos Valencia, Valencia, Spain Duration: 25 Mar 2024 → 27 Mar 2024 https://www.date-conference.com/

Publication series

Name	Proceedings -Design, Automation and Test in Europe, DATE
ISSN (Print)	1530-1591
ISSN (Electronic)	1558-1101

Conference

Conference	27th Design, Automation and Test in Europe Conference (DATE 2024)
Place	Spain
City	Valencia
Period	25/03/24 → 27/03/24
Internet address	https://www.date-conference.com/

Bibliographical note

Research Unit(s) information for this publication is provided by the author(s) concerned.

Funding

This work was supported by National Natural Science Foundation of China under Grants No. 62372197, No. U2001203, No. U22A2071, No. 62102155, by Natural Science Foundation of Shandong Province under Grant No. ZR2020LZH014, and by Research Grants Council of the Hong Kong Special Administrative Region, China under Grant No. CityU 11217020.

Research Keywords

bad block management
3D charge trap NAND flash
endurance
reliability

RGC Funding Information

RGC-funded

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Cite this

@inproceedings{d2700539fd86425784026ddeaf5263fd,

title = "LaVA: An Effective Layer Variation Aware Bad Block Management for 3D CT NAND Flash",

abstract = "3D NAND flash with charge trap (CT) technology has been developed by stacking multiple layers vertically to boost storage capacity while ensuring reliability and scalability. One of its critical characteristics is the large endurance variation among and inside blocks and layers. With this feature, traditional bad block management (BBM), which determines block lifetime by the page with worst endurance, results in underutilization of solid state drive (SSD) usage. In this paper, a layer variation aware and fault-tolerant bad block management, named LaVA, is proposed to prolong the lifetime of 3D NAND flash storage. The relevant layer, instead of the entire flash block, is discarded at a finer granularity when a page failure is encountered. Experimental results based on real-world workloads show that LaVA can significantly extend the endurance of 3D CT NAND flash (30.6%-62.2%) with a small performance degradation (less than 10% increase of tail I/Oresponse time), compared to the conventional technique. {\textcopyright} 2024 EDAA.",

keywords = "bad block management, 3D charge trap NAND flash, endurance, reliability",

author = "Shuhan Bai and You Zhou and Fei Wu and Changsheng Xie and Tei-Wei Kuo and Xue, {Chun Jason}",

note = "Research Unit(s) information for this publication is provided by the author(s) concerned.; 27th Design, Automation and Test in Europe Conference (DATE 2024) ; Conference date: 25-03-2024 Through 27-03-2024",

year = "2024",

language = "English",

isbn = "979-8-3503-4860-6",

series = "Proceedings -Design, Automation and Test in Europe, DATE",

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booktitle = "2024 Design, Automation & Test in Europe Conference & Exhibition (DATE)",

address = "United States",

url = "https://www.date-conference.com/",

}

Bai, S, Zhou, Y, Wu, F, Xie, C, Kuo, T-W & Xue, CJ 2024, LaVA: An Effective Layer Variation Aware Bad Block Management for 3D CT NAND Flash. in 2024 Design, Automation & Test in Europe Conference & Exhibition (DATE): Proceedings. Proceedings -Design, Automation and Test in Europe, DATE, IEEE, 27th Design, Automation and Test in Europe Conference (DATE 2024), Valencia, Spain, 25/03/24.

LaVA: An Effective Layer Variation Aware Bad Block Management for 3D CT NAND Flash. / Bai, Shuhan; Zhou, You; Wu, Fei et al.
2024 Design, Automation & Test in Europe Conference & Exhibition (DATE): Proceedings. IEEE, 2024. (Proceedings -Design, Automation and Test in Europe, DATE).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - LaVA

T2 - 27th Design, Automation and Test in Europe Conference (DATE 2024)

AU - Bai, Shuhan

AU - Zhou, You

AU - Wu, Fei

AU - Xie, Changsheng

AU - Kuo, Tei-Wei

AU - Xue, Chun Jason

N1 - Research Unit(s) information for this publication is provided by the author(s) concerned.

PY - 2024

Y1 - 2024

N2 - 3D NAND flash with charge trap (CT) technology has been developed by stacking multiple layers vertically to boost storage capacity while ensuring reliability and scalability. One of its critical characteristics is the large endurance variation among and inside blocks and layers. With this feature, traditional bad block management (BBM), which determines block lifetime by the page with worst endurance, results in underutilization of solid state drive (SSD) usage. In this paper, a layer variation aware and fault-tolerant bad block management, named LaVA, is proposed to prolong the lifetime of 3D NAND flash storage. The relevant layer, instead of the entire flash block, is discarded at a finer granularity when a page failure is encountered. Experimental results based on real-world workloads show that LaVA can significantly extend the endurance of 3D CT NAND flash (30.6%-62.2%) with a small performance degradation (less than 10% increase of tail I/Oresponse time), compared to the conventional technique. © 2024 EDAA.

AB - 3D NAND flash with charge trap (CT) technology has been developed by stacking multiple layers vertically to boost storage capacity while ensuring reliability and scalability. One of its critical characteristics is the large endurance variation among and inside blocks and layers. With this feature, traditional bad block management (BBM), which determines block lifetime by the page with worst endurance, results in underutilization of solid state drive (SSD) usage. In this paper, a layer variation aware and fault-tolerant bad block management, named LaVA, is proposed to prolong the lifetime of 3D NAND flash storage. The relevant layer, instead of the entire flash block, is discarded at a finer granularity when a page failure is encountered. Experimental results based on real-world workloads show that LaVA can significantly extend the endurance of 3D CT NAND flash (30.6%-62.2%) with a small performance degradation (less than 10% increase of tail I/Oresponse time), compared to the conventional technique. © 2024 EDAA.

KW - bad block management

KW - 3D charge trap NAND flash

KW - endurance

KW - reliability

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M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 979-8-3503-4860-6

T3 - Proceedings -Design, Automation and Test in Europe, DATE

BT - 2024 Design, Automation & Test in Europe Conference & Exhibition (DATE)

PB - IEEE

Y2 - 25 March 2024 through 27 March 2024

ER -

LaVA: An Effective Layer Variation Aware Bad Block Management for 3D CT NAND Flash

Abstract

Publication series

Conference

Bibliographical note

Funding

Research Keywords

RGC Funding Information

Other Access Options

Permanent Link

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GRF: How to Utilize a Huge Number of Flash Chips to Meet the Performance and Reliability Requirements via Self-Healing and Partitioning

Cite this

LaVA: An Effective Layer Variation Aware Bad Block Management for 3D CT NAND Flash

Abstract

Publication series

Conference

Bibliographical note

Funding

Research Keywords

RGC Funding Information

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Projects

GRF: How to Utilize a Huge Number of Flash Chips to Meet the Performance and Reliability Requirements via Self-Healing and Partitioning

Cite this