Lattice site locations of excess arsenic atoms in gallium arsenide grown by low-temperature molecular beam epitaxy

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Material Science

100
Temperature Material Science
100
Gallium Arsenide Material Science
100
Molecular Beam Epit... Material Science
100
Arsenic Material Science
50
Particle Material Science
50
Buffer Layer Material Science

Keyphrases

100
Gallium Arsenide Keyphrases
100
Low Temperature Keyphrases
100
Molecular Beam Epit... Keyphrases
100
Arsenic Keyphrases
100
Lattice Site Keyphrases
100
Site Location Keyphrases
50
Annealing Keyphrases
50
As-grown Keyphrases
50
Buffer Layer Keyphrases
50
Particle Induced X-... Keyphrases
50
Ion Channels Keyphrases
50
Interstitial Positi... Keyphrases
50
Low Substrate Tempe... Keyphrases
50
Channelling Method Keyphrases

Chemistry

100
Atom Chemistry
100
Reaction Temperatur... Chemistry
100
Gallium Chemistry
100
Arsenic Atom Chemistry
100
Molecular Beam Epit... Chemistry
16
Procedure Chemistry
16
Ion Channeling Chemistry
16
Buffer Solution Chemistry

INIS

100
atoms INIS
100
gallium arsenides INIS
100
low temperature INIS
100
molecular beam epit... INIS
100
arsenic INIS
28
layers INIS
28
interstitials INIS
14
particles INIS
14
substrates INIS
14
x radiation INIS
14
buffers INIS
14
annealing INIS
14
precipitation INIS
14
emission INIS
14
ion channeling INIS

Engineering

100
Gallium Arsenide Engineering
100
Low-Temperature Engineering
100
Arsenic Engineering
100
Lattice Site Engineering
50
Channelling Engineering
50
Buffer Layer Engineering
50
Ray Emission Engineering
50
Interstitial Positi... Engineering
50
Forming Engineering
50
Substrate Temperatu... Engineering
50
Model Engineering
Research OutputsResearch Output authored by Lattice site locations of excess arsenic atoms in gallium arsenide grown by low-temperature molecular beam epitaxy is tagged with the concept