Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires

Fengjing Liu; Xinming Zhuang; Mingxu Wang; Dongqing Qi; Shengpan Dong; SenPo Yip; Yanxue Yin; Jie Zhang; Zixu Sa; Kepeng Song; Longbing He; Yang Tan; You Meng; Johnny C. Ho; Lei Liao; Feng Chen; Zai-xing Yang

doi:10.1038/s41467-023-43323-x

Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires

Fengjing Liu, Xinming Zhuang, Mingxu Wang, Dongqing Qi, Shengpan Dong, SenPo Yip, Yanxue Yin, Jie Zhang, Zixu Sa, Kepeng Song^*, Longbing He, Yang Tan, You Meng, Johnny C. Ho^*, Lei Liao, Feng Chen, Zai-xing Yang^*

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

58 Citations (Scopus)

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Abstract

Growing high-quality core-shell heterostructure nanowires is still challenging due to the lattice mismatch issue at the radial interface. Herein, a versatile strategy is exploited for the lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires by simply utilizing the surfactant and amorphous natures of chalcogenide semiconductors. Specifically, a variety of III-V/chalcogenide core-shell heterostructure nanowires are successfully constructed with controlled shell thicknesses, compositions, and smooth surfaces. Due to the conformal properties of obtained heterostructure nanowires, the wavelength-dependent bi-directional photoresponse and visible light-assisted infrared photodetection are realized in the type-I GaSb/GeS core-shell heterostructure nanowires. Also, the enhanced infrared photodetection is found in the type-II InGaAs/GeS core-shell heterostructure nanowires compared with the pristine InGaAs nanowires, in which both responsivity and detectivity are improved by more than 2 orders of magnitude. Evidently, this work paves the way for the lattice-mismatch-free construction of core-shell heterostructure nanowires by chemical vapor deposition for next-generation high-performance nanowire optoelectronics. © 2023, The Author(s).

Original language	English
Article number	7480
Journal	Nature Communications
Volume	14
Online published	18 Nov 2023
DOIs	https://doi.org/10.1038/s41467-023-43323-x
Publication status	Published - 2023

Funding

We acknowledge the National Key R&D Program of China (No. 2017YFA0305500) (Z.-x.Y.), National Natural Science Foundation of China (No. 61904096) (Z.-x.Y.), Taishan Scholars Program of Shandong Province (No. tsqn201812006) (Z.-x.Y.), Natural Science Foundation of Shandong Province (No. ZR2022JQ05) (Z.-x.Y.) and (No. ZR2022QF025) (F.L.), and a fellowship award from the Research Grants Council of the Hong Kong Special Administrative Region, China (CityU RFS2021−1S04) (J.C.H.).

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title = "Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires",

abstract = "Growing high-quality core-shell heterostructure nanowires is still challenging due to the lattice mismatch issue at the radial interface. Herein, a versatile strategy is exploited for the lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires by simply utilizing the surfactant and amorphous natures of chalcogenide semiconductors. Specifically, a variety of III-V/chalcogenide core-shell heterostructure nanowires are successfully constructed with controlled shell thicknesses, compositions, and smooth surfaces. Due to the conformal properties of obtained heterostructure nanowires, the wavelength-dependent bi-directional photoresponse and visible light-assisted infrared photodetection are realized in the type-I GaSb/GeS core-shell heterostructure nanowires. Also, the enhanced infrared photodetection is found in the type-II InGaAs/GeS core-shell heterostructure nanowires compared with the pristine InGaAs nanowires, in which both responsivity and detectivity are improved by more than 2 orders of magnitude. Evidently, this work paves the way for the lattice-mismatch-free construction of core-shell heterostructure nanowires by chemical vapor deposition for next-generation high-performance nanowire optoelectronics. {\textcopyright} 2023, The Author(s).",

author = "Fengjing Liu and Xinming Zhuang and Mingxu Wang and Dongqing Qi and Shengpan Dong and SenPo Yip and Yanxue Yin and Jie Zhang and Zixu Sa and Kepeng Song and Longbing He and Yang Tan and You Meng and Ho, {Johnny C.} and Lei Liao and Feng Chen and Zai-xing Yang",

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volume = "14",

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AU - Liu, Fengjing

AU - Zhuang, Xinming

AU - Wang, Mingxu

AU - Qi, Dongqing

AU - Dong, Shengpan

AU - Yip, SenPo

AU - Yin, Yanxue

AU - Zhang, Jie

AU - Sa, Zixu

AU - Song, Kepeng

AU - He, Longbing

AU - Tan, Yang

AU - Meng, You

AU - Ho, Johnny C.

AU - Liao, Lei

AU - Chen, Feng

AU - Yang, Zai-xing

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AB - Growing high-quality core-shell heterostructure nanowires is still challenging due to the lattice mismatch issue at the radial interface. Herein, a versatile strategy is exploited for the lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires by simply utilizing the surfactant and amorphous natures of chalcogenide semiconductors. Specifically, a variety of III-V/chalcogenide core-shell heterostructure nanowires are successfully constructed with controlled shell thicknesses, compositions, and smooth surfaces. Due to the conformal properties of obtained heterostructure nanowires, the wavelength-dependent bi-directional photoresponse and visible light-assisted infrared photodetection are realized in the type-I GaSb/GeS core-shell heterostructure nanowires. Also, the enhanced infrared photodetection is found in the type-II InGaAs/GeS core-shell heterostructure nanowires compared with the pristine InGaAs nanowires, in which both responsivity and detectivity are improved by more than 2 orders of magnitude. Evidently, this work paves the way for the lattice-mismatch-free construction of core-shell heterostructure nanowires by chemical vapor deposition for next-generation high-performance nanowire optoelectronics. © 2023, The Author(s).

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Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires

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Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires

Abstract

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Publisher's Copyright Statement

RGC Funding Information

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RFS: Developing Negative-Capacitance Nanowire Transistor Arrays and Integrated Circuits for Next-Generation Flexible Electronics

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