Lattice imaging of silicide-silicon interfaces

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • L. J. Chen
  • J. W. Mayer
  • K. N. Tu
  • T. T. Sheng

Detail(s)

Original languageEnglish
Pages (from-to)91-97
Journal / PublicationThin Solid Films
Volume93
Issue number1-2
Publication statusPublished - 9 Jul 1982
Externally publishedYes

Abstract

The interfaces of both epitaxial and non-epitaxial silicides and silicon were investigated by the direct lattice imaging method using cross-sectional samples. Non-epitaxial CoSi2 on silicon was observed to have a curved interface. Epitaxial CoSi2, however, was found to be smooth withib a facet. No evidence of an amorphous layer at the interface was obtained. Epitaxial NiSi2 on Si(001) was found to be heavily faceted. The facets are on {111} and {100} planes with the former more frequently observed. The interface between Si(111) and NiSi2 is also faceted but less so than that for Si(001). The interface is very rough on a large scale. Straight boundary lines corresponding to faceted planes were observed which indicated that the interfaces on an atomic scale were quite smooth. Defect clusters and planar defects were also observed at the interfaces. © 1982.

Bibliographic Note

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Citation Format(s)

Lattice imaging of silicide-silicon interfaces. / Chen, L. J.; Mayer, J. W.; Tu, K. N.; Sheng, T. T.

In: Thin Solid Films, Vol. 93, No. 1-2, 09.07.1982, p. 91-97.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review