Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

Henan Li; Peng Li; Jing-Kai Huang; Ming-Yang Li; Chih-Wen Yang; Yumeng Shi; Xi-Xiang Zhang; Lain-Jong Li

doi:10.1021/acsnano.6b06496

Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

Henan Li, Peng Li, Jing-Kai Huang, Ming-Yang Li, Chih-Wen Yang, Yumeng Shi^*, Xi-Xiang Zhang, Lain-Jong Li

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

52 Citations (Scopus)

Abstract

Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers. © 2016 American Chemical Society.

Original language	English
Pages (from-to)	10516-10523
Journal	ACS Nano
Volume	10
Issue number	11
DOIs	https://doi.org/10.1021/acsnano.6b06496
Publication status	Published - 22 Nov 2016
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

chemical vapor deposition
heterostructure
transition metal dichalcogenides
two-dimensional materials

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abstract = "Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers. {\textcopyright} 2016 American Chemical Society.",

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author = "Henan Li and Peng Li and Jing-Kai Huang and Ming-Yang Li and Chih-Wen Yang and Yumeng Shi and Xi-Xiang Zhang and Lain-Jong Li",

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T1 - Laterally Stitched Heterostructures of Transition Metal Dichalcogenide

T2 - Chemical Vapor Deposition Growth on Lithographically Patterned Area

AU - Li, Henan

AU - Li, Peng

AU - Huang, Jing-Kai

AU - Li, Ming-Yang

AU - Yang, Chih-Wen

AU - Shi, Yumeng

AU - Zhang, Xi-Xiang

AU - Li, Lain-Jong

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2016/11/22

Y1 - 2016/11/22

N2 - Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers. © 2016 American Chemical Society.

AB - Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers. © 2016 American Chemical Society.

KW - chemical vapor deposition

KW - heterostructure

KW - transition metal dichalcogenides

KW - two-dimensional materials

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U2 - 10.1021/acsnano.6b06496

DO - 10.1021/acsnano.6b06496

M3 - RGC 21 - Publication in refereed journal

SN - 1936-0851

VL - 10

SP - 10516

EP - 10523

JO - ACS Nano

JF - ACS Nano

IS - 11

ER -

Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

Abstract

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