Lateral organic-inorganic hybrid Vis-NIR photodetectors based on GaN nanowires promoting photogenerated carriers transfer

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Tao Han
  • Zexin Wu
  • Zhilong Deng
  • Xiaofeng Zhang
  • Sidi Yang
  • And 4 others
  • Cuicui Chen
  • Jiajia Zhu
  • Shufang Ding
  • Chunzhi Jiang

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)806-814
Number of pages9
Journal / PublicationJournal of Materiomics
Volume8
Issue number4
Online published2 Feb 2022
Publication statusPublished - Jul 2022

Link(s)

Abstract

The narrow bandgap of the low-energy near-infrared (NIR) polymer would lead to overlap between adjacent energy levels, which is a major barrier to the preparation of Vis-NIR polymer bulk heterojunction (BHJ) photodetectors with small responsivity and photocurrent. In this study, a high-performance lateral inorganic-organic hybrid photodetector was constructed to eliminate this barrier by combining GaN nanowires (GaN-NWs) with PDPP3T:PC61BM-based BHJ. In stage one, high-quality GaN-NWs were synthesized by the catalyst-free CVD method. The mechanism for controlling GaN-NWs morphology by adjusting the NH3 flow rate was revealed. In stage two, the GaN-NWs with large electron mobility were used to accelerate the transfer of photogenerated carriers in the BHJ layer. Finally, compared with the BHJ device, the BHJ/GaN device demonstrated obvious improvements in responsivity and photocurrent at the wavelength between 400 and 1000 nm. The responsivity and photocurrent increased over 20-fold at the NIR band of 800–900 nm. Besides, owing to the energy level gradient effect, the BHJ/GaN device has a response speed of 7.8/<5.0 ms, which increases over three orders of magnitude than that of the GaN-NWs-based device (tr/tf: 7.1/10.9 s). Therefore, the novel device structure proposed in this work holds great potential for preparing high-performance Vis-NIR photodetectors.

Research Area(s)

  • Bulk heterojunction, GaN nanowires, Lateral photodetectors, Organic materials, Organic-inorganic hybrid, Vis-NIR photodetectors

Citation Format(s)

Lateral organic-inorganic hybrid Vis-NIR photodetectors based on GaN nanowires promoting photogenerated carriers transfer. / Han, Tao; Wu, Zexin; Deng, Zhilong; Zhang, Xiaofeng; Yang, Sidi; Chen, Cuicui; Zhu, Jiajia; Ding, Shufang; Jiang, Chunzhi.

In: Journal of Materiomics, Vol. 8, No. 4, 07.2022, p. 806-814.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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