Laser gain and current density in a disordered AlGaAs/GaAs quantum well

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Detail(s)

Original languageEnglish
Pages (from-to)1233-1234
Journal / PublicationElectronics Letters
Volume29
Issue number14
Publication statusPublished - 8 Jul 1993
Externally publishedYes

Abstract

The laser gain and current density at room temperature are analyzed for disordered (interdiffusion induced) Al0·3Ga0·7As/GaAs single quantum well structures at a carrier injection level of 4×1012 cm-2. The results show that both the peak gain and current density remain about the same strength during the initial stages of disordering, and provide a bandwidth of 55 nm.

Citation Format(s)

Laser gain and current density in a disordered AlGaAs/GaAs quantum well. / Li, E. H.; Chan, K. S.

In: Electronics Letters, Vol. 29, No. 14, 08.07.1993, p. 1233-1234.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review