Laser ablation synthesis and optical characterization of silicon carbide nanowires

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Wensheng Shi
  • Yufeng Zheng
  • Hongying Peng
  • Ning Wang
  • Shuit-Tong Lee

Detail(s)

Original languageEnglish
Pages (from-to)3228-3230
Journal / PublicationJournal of the American Ceramic Society
Volume83
Issue number12
Publication statusPublished - Dec 2000

Abstract

Silicon carbide (SiC) nanowires were synthesized at 900°C by the laser ablation technique. The growth morphology, microstructure, and defects in SiC nanowires were characterized by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The Raman scattering study indicated that the Raman peaks corresponding to the TO and LO phonon modes of the SiC nanowires had larger red shifts compared to those of bulk SiC material. The red shift, broadening peak, and the asymmetry of the Raman peak could be explained by the size confinement effect in the radial and growth directions. The growth mechanism of SiC nanowires was discussed based on the vapor-liquid-solid reaction.

Citation Format(s)

Laser ablation synthesis and optical characterization of silicon carbide nanowires. / Shi, Wensheng; Zheng, Yufeng; Peng, Hongying; Wang, Ning; Lee, Chun Sing; Lee, Shuit-Tong.

In: Journal of the American Ceramic Society, Vol. 83, No. 12, 12.2000, p. 3228-3230.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review