Large-signal transistor device measurement

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

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Author(s)

Detail(s)

Original languageEnglish
Title of host publicationChina 1991 International Conference on Circuits and Systems
PublisherInstitute of Electrical and Electronics Engineers, Inc.
Pages977-979
Publication statusPublished - 1991

Conference

Title1991 International Conference on Circuits and Systems
LocationShenzhen University
PlaceChina
CityShenzhen
Period16 - 17 June 1991

Link(s)

Check@CityULib
Link to Scopus https://www.scopus.com/record/display.uri?eid=2-s2.0-0026262924&origin=recordpage
Permanent Link https://scholars.cityu.edu.hk/en/publications/publication(02adeaec-6d5f-43a6-a75d-403b95ccbfee).html

Abstract

A new method for characterizing transistors operating in the non-linear region has been presented by some of the present authors. In this paper, more measurement results will be presented to verify the feasibility of the method developed. The trends of variation of large signal S-parameters at different power levels will be shown.

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Publication fingerprints text

100
devices INIS
100
signals INIS
100
transistors INIS
100
Large Signal Keyphrases
100
Transistor Device Keyphrases
100
Device-based Measur... Keyphrases
100
Transistor Engineering
100
Measurement Engineering
50
levels INIS
50
power INIS
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Citation Format(s)

[ RIS ] [ BibTeX ]
Large-signal transistor device measurement. / Tsang, K. F.; Tang, C. W.; Yip, P. C L et al.
China 1991 International Conference on Circuits and Systems. Institute of Electrical and Electronics Engineers, Inc., 1991. p. 977-979.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review