Large-signal transistor device measurement
Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45) › 32_Refereed conference paper (with host publication) › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Title of host publication | China 1991 International Conference on Circuits and Systems |
| Publisher | Publ by IEEE |
| Pages | 977-979 |
| Publication status | Published - 1991 |
Conference
| Title | 1991 International Conference on Circuits and Systems |
|---|---|
| Location | Shenzhen University |
| Place | China |
| City | Shenzhen |
| Period | 16 - 17 June 1991 |
Link(s)
Abstract
A new method for characterizing transistors operating in the non-linear region has been presented by some of the present authors. In this paper, more measurement results will be presented to verify the feasibility of the method developed. The trends of variation of large signal S-parameters at different power levels will be shown.
Citation Format(s)
Large-signal transistor device measurement. / Tsang, K. F.; Tang, C. W.; Yip, P. C L et al.
China 1991 International Conference on Circuits and Systems. Publ by IEEE, 1991. p. 977-979.
China 1991 International Conference on Circuits and Systems. Publ by IEEE, 1991. p. 977-979.
Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45) › 32_Refereed conference paper (with host publication) › peer-review
