Large‐Area Polymorphic In₂Se₃ Ferroelectric Transistor Array for Stable Nonvolatile Storage and High‐Precision Neuromorphic Computing

2D ferroelectric field-effect transistors (FeFETs) are expected to be a practical solution for next-generation in-memory computing, seamlessly integrating with computer hardware architectures to overcome the von Neumann bottleneck. At present, emerging 2D materials are driving chip miniaturization. Among them, In₂Se₃ stands out, as both theoretical and experimental studies have confirmed its novel physical properties with practical applications. Notably, monolayer In₂Se₃ retains ferroelectricity at room temperature and exhibits high carrier field-effect mobility (µ_FE). Furthermore, it can be synthesized via chemical vapor deposition (CVD) as thin films, demonstrating strong potential for large-area 2D FeFET array. Here, we investigate the In₂Se₃ thin film FeFET array prepared by CVD, which has a µ_FE of 151.7 cm² V⁻¹ s⁻¹ and an on-off ratio of up to 10⁶ . Inspiringly, the array exhibits stable, non-volatile characteristics, maintaining a high-to-low resistance state window of larger than 10² even after 1800 s. Furthermore, we explore its potential for neuromorphic computing by applying the array to machine learning tasks across various datasets and neural network architectures, consistently achieving a high 2D materials, ferroelectric, neuromorphic, polymorphic, transistor recognition accuracy greater than 90%.
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