Large-area and bright pulsed electroluminescence in monolayer semiconductors

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

31 Scopus Citations
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Author(s)

  • Der-Hsien Lien
  • Matin Amani
  • Sujay B. Desai
  • Geun Ho Ahn
  • Kevin Han
  • Joel W. Ager
  • Ming C. Wu
  • Ali Javey

Detail(s)

Original languageEnglish
Article number1229
Journal / PublicationNature Communications
Volume9
Online published26 Mar 2018
Publication statusPublished - 2018
Externally publishedYes

Abstract

Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS2 , WS2 , MoSe2 , and WSe2 ) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

Citation Format(s)

Large-area and bright pulsed electroluminescence in monolayer semiconductors. / Lien, Der-Hsien; Amani, Matin; Desai, Sujay B.; Ahn, Geun Ho; Han, Kevin; He, Jr-Hau; Ager, Joel W.; Wu, Ming C.; Javey, Ali.

In: Nature Communications, Vol. 9, 1229, 2018.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review