Large-signal transistor device measurement

K. F. Tsang; C. W. Tang; P. C L Yip; G. B. Morgan; W. S. Chan

Large-signal transistor device measurement

K. F. Tsang, C. W. Tang, P. C L Yip, G. B. Morgan, W. S. Chan

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

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Abstract

A new method for characterizing transistors operating in the non-linear region has been presented by some of the present authors. In this paper, more measurement results will be presented to verify the feasibility of the method developed. The trends of variation of large signal S-parameters at different power levels will be shown.

Original language	English
Title of host publication	China 1991 International Conference on Circuits and Systems
Publisher	IEEE
Pages	977-979
Publication status	Published - 1991
Event	1991 International Conference on Circuits and Systems - Shenzhen University, Shenzhen, China Duration: 16 Jun 1991 → 17 Jun 1991

Conference

Conference	1991 International Conference on Circuits and Systems
Place	China
City	Shenzhen
Period	16/06/91 → 17/06/91

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@inproceedings{02adeaec6d5f43a6a75d403b95ccbfee,

title = "Large-signal transistor device measurement",

abstract = "A new method for characterizing transistors operating in the non-linear region has been presented by some of the present authors. In this paper, more measurement results will be presented to verify the feasibility of the method developed. The trends of variation of large signal S-parameters at different power levels will be shown.",

author = "Tsang, {K. F.} and Tang, {C. W.} and Yip, {P. C L} and Morgan, {G. B.} and Chan, {W. S.}",

year = "1991",

language = "English",

pages = "977--979",

booktitle = "China 1991 International Conference on Circuits and Systems",

publisher = "IEEE",

address = "United States",

note = "1991 International Conference on Circuits and Systems ; Conference date: 16-06-1991 Through 17-06-1991",

}

TY - GEN

T1 - Large-signal transistor device measurement

AU - Tsang, K. F.

AU - Tang, C. W.

AU - Yip, P. C L

AU - Morgan, G. B.

AU - Chan, W. S.

PY - 1991

Y1 - 1991

N2 - A new method for characterizing transistors operating in the non-linear region has been presented by some of the present authors. In this paper, more measurement results will be presented to verify the feasibility of the method developed. The trends of variation of large signal S-parameters at different power levels will be shown.

AB - A new method for characterizing transistors operating in the non-linear region has been presented by some of the present authors. In this paper, more measurement results will be presented to verify the feasibility of the method developed. The trends of variation of large signal S-parameters at different power levels will be shown.

UR - http://www.scopus.com/inward/record.url?scp=0026262924&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0026262924&origin=recordpage

M3 - RGC 32 - Refereed conference paper (with host publication)

SP - 977

EP - 979

BT - China 1991 International Conference on Circuits and Systems

PB - IEEE

T2 - 1991 International Conference on Circuits and Systems

Y2 - 16 June 1991 through 17 June 1991

ER -

Large-signal transistor device measurement

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