Large-Scale Ni-Doped ZnO Nanowire Arrays and Electrical and Optical Properties

Jr H. He; Chang S. Lao; Lih J. Chen; Dragomir Davidovic; Zhong L. Wang

doi:10.1021/ja0559193

Large-Scale Ni-Doped ZnO Nanowire Arrays and Electrical and Optical Properties

Jr H. He
, Chang S. Lao
, Lih J. Chen
, Dragomir Davidovic
, Zhong L. Wang

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

255 Citations (Scopus)

Abstract

Large-scale Ni-doped ZnO nanowire (NW) arrays are grown. The electrical conductivity of a single Ni-doped ZnO NW has been increased for 30 times. The photoluminescence (PL) spectrum of the doped ZnO NWs has a red shift, suggesting possible doping induced band edge bending. The doped NW arrays could be the basis for building integrated nanoscale transistors, sensors, and photodetectors.

Original language	English
Pages (from-to)	16376-16377
Journal	Journal of the American Chemical Society
Volume	127
Issue number	47
Online published	2 Nov 2005
DOIs	https://doi.org/10.1021/ja0559193
Publication status	Published - 30 Nov 2005
Externally published	Yes

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title = "Large-Scale Ni-Doped ZnO Nanowire Arrays and Electrical and Optical Properties",

abstract = "Large-scale Ni-doped ZnO nanowire (NW) arrays are grown. The electrical conductivity of a single Ni-doped ZnO NW has been increased for 30 times. The photoluminescence (PL) spectrum of the doped ZnO NWs has a red shift, suggesting possible doping induced band edge bending. The doped NW arrays could be the basis for building integrated nanoscale transistors, sensors, and photodetectors.",

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AU - He, Jr H.

AU - Lao, Chang S.

AU - Chen, Lih J.

AU - Davidovic, Dragomir

AU - Wang, Zhong L.

PY - 2005/11/30

Y1 - 2005/11/30

N2 - Large-scale Ni-doped ZnO nanowire (NW) arrays are grown. The electrical conductivity of a single Ni-doped ZnO NW has been increased for 30 times. The photoluminescence (PL) spectrum of the doped ZnO NWs has a red shift, suggesting possible doping induced band edge bending. The doped NW arrays could be the basis for building integrated nanoscale transistors, sensors, and photodetectors.

AB - Large-scale Ni-doped ZnO nanowire (NW) arrays are grown. The electrical conductivity of a single Ni-doped ZnO NW has been increased for 30 times. The photoluminescence (PL) spectrum of the doped ZnO NWs has a red shift, suggesting possible doping induced band edge bending. The doped NW arrays could be the basis for building integrated nanoscale transistors, sensors, and photodetectors.

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U2 - 10.1021/ja0559193

DO - 10.1021/ja0559193

M3 - RGC 21 - Publication in refereed journal

SN - 0002-7863

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SP - 16376

EP - 16377

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 47

ER -

Large-Scale Ni-Doped ZnO Nanowire Arrays and Electrical and Optical Properties

Abstract

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