Large positive and negative magnetoresistance in armchair phosphorene nanoribbons

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Detail(s)

Original languageEnglish
Article number126641
Journal / PublicationPhysics Letters A
Volume384
Issue number26
Online published4 Jun 2020
Publication statusPublished - 18 Sep 2020

Abstract

We investigate the tunnel magnetoresistance (TMR) in an armchair phosphorene nanoribbon modulated by two ferromagnetic stripes. It is shown that large TMR can be achieved by applying a perpendicularly electric field to the phosphorene plane. We find that the TMR can be adjusted by an external gate voltage, and the TMR oscillates periodically from positive to negative by a slight change of the gate voltage. This characteristic can be observed in a wide region of exchange splitting values. Our findings open the way to design phosphorene-based spintronics nanodevices, and it may contribute to the future low power spintronic applications.

Research Area(s)

  • Phosphorene nanoribbon, Spin transport, Tunnel magnetoresistance

Citation Format(s)

Large positive and negative magnetoresistance in armchair phosphorene nanoribbons. / Jiang, Junsong; Zhang, Qingtian; Mu, Zhongfei; Chan, Kwok Sum.

In: Physics Letters A, Vol. 384, No. 26, 126641, 18.09.2020.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal