Large positive and negative magnetoresistance in armchair phosphorene nanoribbons

Junsong Jiang; Qingtian Zhang; Zhongfei Mu; Kwok Sum Chan

doi:10.1016/j.physleta.2020.126641

Large positive and negative magnetoresistance in armchair phosphorene nanoribbons

Junsong Jiang
, Qingtian Zhang^*
, Zhongfei Mu
, Kwok Sum Chan^*

^*Corresponding author for this work

Department of Physics

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

6 Citations (Scopus)

Abstract

We investigate the tunnel magnetoresistance (TMR) in an armchair phosphorene nanoribbon modulated by two ferromagnetic stripes. It is shown that large TMR can be achieved by applying a perpendicularly electric field to the phosphorene plane. We find that the TMR can be adjusted by an external gate voltage, and the TMR oscillates periodically from positive to negative by a slight change of the gate voltage. This characteristic can be observed in a wide region of exchange splitting values. Our findings open the way to design phosphorene-based spintronics nanodevices, and it may contribute to the future low power spintronic applications.

Original language	English
Article number	126641
Journal	Physics Letters A
Volume	384
Issue number	26
Online published	4 Jun 2020
DOIs	https://doi.org/10.1016/j.physleta.2020.126641
Publication status	Published - 18 Sept 2020

Research Keywords

Phosphorene nanoribbon
Spin transport
Tunnel magnetoresistance

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10.1016/j.physleta.2020.126641

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title = "Large positive and negative magnetoresistance in armchair phosphorene nanoribbons",

abstract = "We investigate the tunnel magnetoresistance (TMR) in an armchair phosphorene nanoribbon modulated by two ferromagnetic stripes. It is shown that large TMR can be achieved by applying a perpendicularly electric field to the phosphorene plane. We find that the TMR can be adjusted by an external gate voltage, and the TMR oscillates periodically from positive to negative by a slight change of the gate voltage. This characteristic can be observed in a wide region of exchange splitting values. Our findings open the way to design phosphorene-based spintronics nanodevices, and it may contribute to the future low power spintronic applications.",

keywords = "Phosphorene nanoribbon, Spin transport, Tunnel magnetoresistance",

author = "Junsong Jiang and Qingtian Zhang and Zhongfei Mu and Chan, \{Kwok Sum\}",

year = "2020",

month = sep,

day = "18",

doi = "10.1016/j.physleta.2020.126641",

language = "English",

volume = "384",

journal = "Physics Letters A",

issn = "0375-9601",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Large positive and negative magnetoresistance in armchair phosphorene nanoribbons

AU - Jiang, Junsong

AU - Zhang, Qingtian

AU - Mu, Zhongfei

AU - Chan, Kwok Sum

PY - 2020/9/18

Y1 - 2020/9/18

N2 - We investigate the tunnel magnetoresistance (TMR) in an armchair phosphorene nanoribbon modulated by two ferromagnetic stripes. It is shown that large TMR can be achieved by applying a perpendicularly electric field to the phosphorene plane. We find that the TMR can be adjusted by an external gate voltage, and the TMR oscillates periodically from positive to negative by a slight change of the gate voltage. This characteristic can be observed in a wide region of exchange splitting values. Our findings open the way to design phosphorene-based spintronics nanodevices, and it may contribute to the future low power spintronic applications.

AB - We investigate the tunnel magnetoresistance (TMR) in an armchair phosphorene nanoribbon modulated by two ferromagnetic stripes. It is shown that large TMR can be achieved by applying a perpendicularly electric field to the phosphorene plane. We find that the TMR can be adjusted by an external gate voltage, and the TMR oscillates periodically from positive to negative by a slight change of the gate voltage. This characteristic can be observed in a wide region of exchange splitting values. Our findings open the way to design phosphorene-based spintronics nanodevices, and it may contribute to the future low power spintronic applications.

KW - Phosphorene nanoribbon

KW - Spin transport

KW - Tunnel magnetoresistance

UR - https://www.scopus.com/pages/publications/85086077736

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85086077736&origin=recordpage

U2 - 10.1016/j.physleta.2020.126641

DO - 10.1016/j.physleta.2020.126641

M3 - RGC 21 - Publication in refereed journal

SN - 0375-9601

VL - 384

JO - Physics Letters A

JF - Physics Letters A

IS - 26

M1 - 126641

ER -

Large positive and negative magnetoresistance in armchair phosphorene nanoribbons

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