Large exchange bias induced by polycrystalline Mn3Ga antiferromagnetic films with controlled layer thickness

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Haokaifeng Wu
  • Iori Sudoh
  • C A F Vaz
  • Jun-young Kim
  • Gonzalo Vallejo-Fernandez
  • Atsufumi Hirohata

Related Research Unit(s)

Detail(s)

Original languageEnglish
Article number215003
Journal / PublicationJournal of Physics D: Applied Physics
Volume51
Issue number21
Online published3 May 2018
Publication statusPublished - 31 May 2018

Link(s)

Abstract

Polycrystalline Mn3Ga layers with thickness in the range from 6-20 nm were deposited at room temperature by a high target utilisation sputtering. To investigate the onset of exchange-bias, a ferromagnetic Co0.6Fe0.4 layer (3.3-9 nm thick) capped with 5 nm Ta, were subsequently deposited. X-ray diffraction measurements confirm the presence of Mn3Ga (0 0 0 2) and (0 0 0 4) peaks characteristic of the D019 antiferromagnetic structure. The 6 nm thick Mn3Ga film shows the largest exchange bias of 430 Oe at 120 K with a blocking temperature of 225 K. The blocking temperature is found to decrease with increasing Mn3Ga thickness. These results in combination with x-ray reflectivity measurements confirm that the quality of the Mn3Ga/Co0.6Fe0.4 interface controls the exchange bias, with the sharp interface with the 6-nm-thick Mn3Ga inducing the largest exchange bias. The magneto-crystalline anisotropy for 6 nm thick Mn3Ga thin film sample is calculated to be . Such a binary antiferromagnetic Heusler alloy is compatible with the current memory fabrication process and hence has a great potential for antiferromagnetic spintronics.

Research Area(s)

  • antiferromagnet, exchange bias, Heusler alloys

Citation Format(s)

Large exchange bias induced by polycrystalline Mn3Ga antiferromagnetic films with controlled layer thickness. / Wu, Haokaifeng; Sudoh, Iori; Xu, Ruihan; Si, Wenshuo; Vaz, C A F; Kim, Jun-young; Vallejo-Fernandez, Gonzalo; Hirohata, Atsufumi.

In: Journal of Physics D: Applied Physics, Vol. 51, No. 21, 215003, 31.05.2018.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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