Kinetics of interfacial reaction in bimetallic CuSn thin films

K. N. Tu; R. D. Thompson

doi:10.1016/0001-6160(82)90201-2

Kinetics of interfacial reaction in bimetallic CuSn thin films

K. N. Tu
, R. D. Thompson

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

464 Citations (Scopus)

Abstract

Kinetics of formation of Cu₆Su₅ between Cu and Sn thin films at room temperature and of Cu₃Sn between Cu₆Sn₅ and Cu at temperatures from 115° to 150°'C were measured by Rutherford backscattering spectroscopy and glancing-incidence X-ray diffraction. The growth of Cu₆Sn₅; showed a linear rate and the reduction of Cu₆Sn₅ due to the growth of Cu₃Sn showed a parabolic rate with an activation energy of 0.99 eV. A flash of W film was deposited between Cu and Sn as diffusion markers during their room temperature reaction. Marker displacement measured by the backscattering technique showed that Cu is the dominant diffusing species in forming Cu₆,Sn₅. By annealing a Cu₃Sn/Cu sample at 640°C for 20 min and by cooling (not a rapid quenching) it to room temperature, we found that the high temperature phase Cu₄Sn can be made metastable at room temperature. © 1982.

Original language	English
Pages (from-to)	947-952
Journal	Acta Metallurgica
Volume	30
Issue number	5
DOIs	https://doi.org/10.1016/0001-6160(82)90201-2
Publication status	Published - May 1982
Externally published	Yes

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title = "Kinetics of interfacial reaction in bimetallic CuSn thin films",

abstract = "Kinetics of formation of Cu6Su5 between Cu and Sn thin films at room temperature and of Cu3Sn between Cu6Sn5 and Cu at temperatures from 115° to 150°'C were measured by Rutherford backscattering spectroscopy and glancing-incidence X-ray diffraction. The growth of Cu6Sn5; showed a linear rate and the reduction of Cu6Sn5 due to the growth of Cu3Sn showed a parabolic rate with an activation energy of 0.99 eV. A flash of W film was deposited between Cu and Sn as diffusion markers during their room temperature reaction. Marker displacement measured by the backscattering technique showed that Cu is the dominant diffusing species in forming Cu6,Sn5. By annealing a Cu3Sn/Cu sample at 640°C for 20 min and by cooling (not a rapid quenching) it to room temperature, we found that the high temperature phase Cu4Sn can be made metastable at room temperature. {\textcopyright} 1982.",

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note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

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T1 - Kinetics of interfacial reaction in bimetallic CuSn thin films

AU - Tu, K. N.

AU - Thompson, R. D.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1982/5

Y1 - 1982/5

N2 - Kinetics of formation of Cu6Su5 between Cu and Sn thin films at room temperature and of Cu3Sn between Cu6Sn5 and Cu at temperatures from 115° to 150°'C were measured by Rutherford backscattering spectroscopy and glancing-incidence X-ray diffraction. The growth of Cu6Sn5; showed a linear rate and the reduction of Cu6Sn5 due to the growth of Cu3Sn showed a parabolic rate with an activation energy of 0.99 eV. A flash of W film was deposited between Cu and Sn as diffusion markers during their room temperature reaction. Marker displacement measured by the backscattering technique showed that Cu is the dominant diffusing species in forming Cu6,Sn5. By annealing a Cu3Sn/Cu sample at 640°C for 20 min and by cooling (not a rapid quenching) it to room temperature, we found that the high temperature phase Cu4Sn can be made metastable at room temperature. © 1982.

AB - Kinetics of formation of Cu6Su5 between Cu and Sn thin films at room temperature and of Cu3Sn between Cu6Sn5 and Cu at temperatures from 115° to 150°'C were measured by Rutherford backscattering spectroscopy and glancing-incidence X-ray diffraction. The growth of Cu6Sn5; showed a linear rate and the reduction of Cu6Sn5 due to the growth of Cu3Sn showed a parabolic rate with an activation energy of 0.99 eV. A flash of W film was deposited between Cu and Sn as diffusion markers during their room temperature reaction. Marker displacement measured by the backscattering technique showed that Cu is the dominant diffusing species in forming Cu6,Sn5. By annealing a Cu3Sn/Cu sample at 640°C for 20 min and by cooling (not a rapid quenching) it to room temperature, we found that the high temperature phase Cu4Sn can be made metastable at room temperature. © 1982.

UR - https://www.scopus.com/pages/publications/0020125253

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0020125253&origin=recordpage

U2 - 10.1016/0001-6160(82)90201-2

DO - 10.1016/0001-6160(82)90201-2

M3 - RGC 21 - Publication in refereed journal

SN - 0001-6160

VL - 30

SP - 947

EP - 952

JO - Acta Metallurgica

JF - Acta Metallurgica

IS - 5

ER -

Kinetics of interfacial reaction in bimetallic CuSn thin films

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