Kinetics of Cu3Ge formation and reaction with Al

J. S. Huang; S. S. Huang; K. N. Tu; F. Deng; S. S. Lau; S. L. Cheng; L. J. Chen

doi:10.1063/1.366291

Kinetics of Cu₃Ge formation and reaction with Al

J. S. Huang, S. S. Huang, K. N. Tu, F. Deng, S. S. Lau, S. L. Cheng, L. J. Chen

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

7 Citations (Scopus)

Abstract

Cu₃Ge films have been found to have a low resistivity, good adhesion on SiO₂, good thermal stability on Si, and good oxidation resistance. It has the potential as an ideal adhesion/barrier/ passivation layer for Cu ultralarge scale integration metallization. The kinetics of Cu₃Ge formation and the thermal stability of Cu₃Ge against Al were studied by in situ resistivity measurement, Rutherford backscattering spectrometry, and transmission electron microscopy. We found that Cu reacted with Ge in the temperature range of 100-200°C. The activation energy of the Cu-Ge compound formation was found to be 1.1±0.1 eV. The Cu-Ge compound was identified as ε-Cu₃Ge from transmission electron microscope diffraction patterns. Upon annealing the ε-Cu₃Ge became unstable on Al at the temperature range of 300-350°C. In the reaction between Al and Cu₃Ge, Cu preferentially reacted with Al to form an ε-Al₂Cu₃ compound. The activation energy of formation of the Al-Cu compound was found to be 2.1±0.1 eV. © 1997 American Institute of Physics.

Original language	English
Pages (from-to)	644-649
Journal	Journal of Applied Physics
Volume	82
Issue number	2
DOIs	https://doi.org/10.1063/1.366291
Publication status	Published - 15 Jul 1997
Externally published	Yes

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@article{e816a7b6bae344a9a156b0eafe3fe81e,

title = "Kinetics of Cu3Ge formation and reaction with Al",

abstract = "Cu3Ge films have been found to have a low resistivity, good adhesion on SiO2, good thermal stability on Si, and good oxidation resistance. It has the potential as an ideal adhesion/barrier/ passivation layer for Cu ultralarge scale integration metallization. The kinetics of Cu3Ge formation and the thermal stability of Cu3Ge against Al were studied by in situ resistivity measurement, Rutherford backscattering spectrometry, and transmission electron microscopy. We found that Cu reacted with Ge in the temperature range of 100-200°C. The activation energy of the Cu-Ge compound formation was found to be 1.1±0.1 eV. The Cu-Ge compound was identified as ε-Cu3Ge from transmission electron microscope diffraction patterns. Upon annealing the ε-Cu3Ge became unstable on Al at the temperature range of 300-350°C. In the reaction between Al and Cu3Ge, Cu preferentially reacted with Al to form an ε-Al2Cu3 compound. The activation energy of formation of the Al-Cu compound was found to be 2.1±0.1 eV. {\textcopyright} 1997 American Institute of Physics.",

author = "Huang, {J. S.} and Huang, {S. S.} and Tu, {K. N.} and F. Deng and Lau, {S. S.} and Cheng, {S. L.} and Chen, {L. J.}",

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year = "1997",

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T1 - Kinetics of Cu3Ge formation and reaction with Al

AU - Huang, J. S.

AU - Huang, S. S.

AU - Tu, K. N.

AU - Deng, F.

AU - Lau, S. S.

AU - Cheng, S. L.

AU - Chen, L. J.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1997/7/15

Y1 - 1997/7/15

N2 - Cu3Ge films have been found to have a low resistivity, good adhesion on SiO2, good thermal stability on Si, and good oxidation resistance. It has the potential as an ideal adhesion/barrier/ passivation layer for Cu ultralarge scale integration metallization. The kinetics of Cu3Ge formation and the thermal stability of Cu3Ge against Al were studied by in situ resistivity measurement, Rutherford backscattering spectrometry, and transmission electron microscopy. We found that Cu reacted with Ge in the temperature range of 100-200°C. The activation energy of the Cu-Ge compound formation was found to be 1.1±0.1 eV. The Cu-Ge compound was identified as ε-Cu3Ge from transmission electron microscope diffraction patterns. Upon annealing the ε-Cu3Ge became unstable on Al at the temperature range of 300-350°C. In the reaction between Al and Cu3Ge, Cu preferentially reacted with Al to form an ε-Al2Cu3 compound. The activation energy of formation of the Al-Cu compound was found to be 2.1±0.1 eV. © 1997 American Institute of Physics.

AB - Cu3Ge films have been found to have a low resistivity, good adhesion on SiO2, good thermal stability on Si, and good oxidation resistance. It has the potential as an ideal adhesion/barrier/ passivation layer for Cu ultralarge scale integration metallization. The kinetics of Cu3Ge formation and the thermal stability of Cu3Ge against Al were studied by in situ resistivity measurement, Rutherford backscattering spectrometry, and transmission electron microscopy. We found that Cu reacted with Ge in the temperature range of 100-200°C. The activation energy of the Cu-Ge compound formation was found to be 1.1±0.1 eV. The Cu-Ge compound was identified as ε-Cu3Ge from transmission electron microscope diffraction patterns. Upon annealing the ε-Cu3Ge became unstable on Al at the temperature range of 300-350°C. In the reaction between Al and Cu3Ge, Cu preferentially reacted with Al to form an ε-Al2Cu3 compound. The activation energy of formation of the Al-Cu compound was found to be 2.1±0.1 eV. © 1997 American Institute of Physics.

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