Isoelectric Point of Si3N4 Measured by An atomic Force Microscopy

Isoelectric Point of Si₃N₄ Measured by An atomic Force Microscopy

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Publication information for this record has been verified with the author(s) concerned.

@article{4984468cdf724a5783f386893a1e2757,

title = "Isoelectric Point of Si3N4 Measured by An atomic Force Microscopy",

author = "H. Zhang and H.-X. He and Z.-F. Liu",

note = "Publication information for this record has been verified with the author(s) concerned.",

year = "2000",

month = oct,

language = "English",

volume = "74",

pages = "1499--1502",

number = "10",

}

TY - JOUR

T1 - Isoelectric Point of Si3N4 Measured by An atomic Force Microscopy

AU - Zhang, H.

AU - He, H.-X.

AU - Liu, Z.-F.

N1 - Publication information for this record has been verified with the author(s) concerned.

PY - 2000/10

Y1 - 2000/10

UR - https://www.scopus.com/pages/publications/0034342096

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0034342096&origin=recordpage

M3 - RGC 21 - Publication in refereed journal

SN - 0137-5083

VL - 74

SP - 1499

EP - 1502

JO - Polish Journal of Chemistry

JF - Polish Journal of Chemistry

IS - 10

ER -