Ion-cutting of Si onto glass by pulsed and direct-current plasma immersion ion implantation

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

6 Scopus Citations
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Author(s)

  • F. Lu
  • D. Qiao
  • M. Cai
  • P. K L Yu
  • S. S. Lau
  • R. K Y Fu
  • L. S. Hung
  • C. P. Li
  • H. C. Chien
  • Y. Liou

Detail(s)

Original languageEnglish
Pages (from-to)2109-2113
Journal / PublicationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number5
Publication statusPublished - Sept 2003

Abstract

Plasma immersion ion implantation was studied for ion-cutting of Si layers onto glass substrate. While a highly defective region was observed near the top of the Si layer transferred onto glass, the crystalline quality was generally quite defect-free in the deeper region of the layer. Experimental results show that the dc PIII mode is more suitable for the ion-cutting process.

Citation Format(s)

Ion-cutting of Si onto glass by pulsed and direct-current plasma immersion ion implantation. / Lu, F.; Qiao, D.; Cai, M. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 5, 09.2003, p. 2109-2113.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review