Ion-cutting of Si onto glass by pulsed and direct-current plasma immersion ion implantation
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 2109-2113 |
Journal / Publication | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 21 |
Issue number | 5 |
Publication status | Published - Sept 2003 |
Link(s)
Abstract
Plasma immersion ion implantation was studied for ion-cutting of Si layers onto glass substrate. While a highly defective region was observed near the top of the Si layer transferred onto glass, the crystalline quality was generally quite defect-free in the deeper region of the layer. Experimental results show that the dc PIII mode is more suitable for the ion-cutting process.
Citation Format(s)
Ion-cutting of Si onto glass by pulsed and direct-current plasma immersion ion implantation. / Lu, F.; Qiao, D.; Cai, M. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 5, 09.2003, p. 2109-2113.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 5, 09.2003, p. 2109-2113.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review