Ion-mediated oxide transistors for neuromorphic electronics: Materials, devices, and perspectives

Ruihan Li; Liuqi Cheng; Wanrong Liu; Chenxing Jin; Xiaofang Shi; Pengshan Xie; Qijun Sun; Mengqiu Long; Junliang Yang; Johnny C. Ho; Jia Sun

doi:10.1063/5.0248824

Ion-mediated oxide transistors for neuromorphic electronics: Materials, devices, and perspectives

Ruihan Li
, Liuqi Cheng
, Wanrong Liu
, Chenxing Jin
, Xiaofang Shi
, Pengshan Xie
, Qijun Sun^*
, Mengqiu Long^*
, Junliang Yang
, Johnny C. Ho
, Jia Sun^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

3 Citations (Scopus)

Abstract

Constrained by the physical architecture of von Neumann computing with separated storage and computation, neuromorphic computing architectures have been proposed. Ion-mediated oxide synaptic transistors (IOSTs), with their unique biomimetic characteristics, have become a key fundamental component in the construction of neuromorphic computing systems. This review comprehensively explores the biomimetic principles and critical indicators of IOSTs and discusses the unique advantages and recent developments associated with employing various electrolyte materials as the dielectric layers in IOSTs, including ionic liquids, ionic gels, organic polymer electrolytes, and inorganic solid electrolytes. Furthermore, we explore the extensive applications of IOSTs across multiple domains, such as multisensory bionics and neuromorphic computing. This article provides an exhaustive perspective on the research related to IOSTs and their system integration and applications, offering insights into their evolving landscape in neuromorphic electronics. © 2025 Author(s).

Original language	English
Article number	021318
Journal	Applied Physics Reviews
Volume	12
Issue number	2
Online published	16 May 2025
DOIs	https://doi.org/10.1063/5.0248824
Publication status	Published - Jun 2025

Funding

This study has been supported by the National Key Research and Development Program of China (Nos. 2023YFE0208600 and 2022YFB3803300), the National Natural Science Foundation of China (Nos. 62375288, U23A20138, and 52173192), the State Key Laboratory of Precision Manufacturing for Extreme Service Performance, Central South University (No. ZZYJKT2023-10), the Research Foundation of Education Bureau of Hunan Province (No. 23B0010), and Fundamental Research Funds for the Central Universities of Central South University (No. 1053320240902).

Publisher's Copyright Statement

COPYRIGHT TERMS OF DEPOSITED FINAL PUBLISHED VERSION FILE: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Ruihan Li, Liuqi Cheng, Wanrong Liu, Chenxing Jin, Xiaofang Shi, Pengshan Xie, Qijun Sun, Mengqiu Long, Junliang Yang, Johnny C. Ho, Jia Sun; Ion-mediated oxide transistors for neuromorphic electronics: Materials, devices, and perspectives. Appl. Phys. Rev. 1 June 2025; 12 (2): 021318 and may be found at https://doi.org/10.1063/5.0248824.

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title = "Ion-mediated oxide transistors for neuromorphic electronics: Materials, devices, and perspectives",

abstract = "Constrained by the physical architecture of von Neumann computing with separated storage and computation, neuromorphic computing architectures have been proposed. Ion-mediated oxide synaptic transistors (IOSTs), with their unique biomimetic characteristics, have become a key fundamental component in the construction of neuromorphic computing systems. This review comprehensively explores the biomimetic principles and critical indicators of IOSTs and discusses the unique advantages and recent developments associated with employing various electrolyte materials as the dielectric layers in IOSTs, including ionic liquids, ionic gels, organic polymer electrolytes, and inorganic solid electrolytes. Furthermore, we explore the extensive applications of IOSTs across multiple domains, such as multisensory bionics and neuromorphic computing. This article provides an exhaustive perspective on the research related to IOSTs and their system integration and applications, offering insights into their evolving landscape in neuromorphic electronics. {\textcopyright} 2025 Author(s).",

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T2 - Materials, devices, and perspectives

AU - Li, Ruihan

AU - Cheng, Liuqi

AU - Liu, Wanrong

AU - Jin, Chenxing

AU - Shi, Xiaofang

AU - Xie, Pengshan

AU - Sun, Qijun

AU - Long, Mengqiu

AU - Yang, Junliang

AU - Ho, Johnny C.

AU - Sun, Jia

PY - 2025/6

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N2 - Constrained by the physical architecture of von Neumann computing with separated storage and computation, neuromorphic computing architectures have been proposed. Ion-mediated oxide synaptic transistors (IOSTs), with their unique biomimetic characteristics, have become a key fundamental component in the construction of neuromorphic computing systems. This review comprehensively explores the biomimetic principles and critical indicators of IOSTs and discusses the unique advantages and recent developments associated with employing various electrolyte materials as the dielectric layers in IOSTs, including ionic liquids, ionic gels, organic polymer electrolytes, and inorganic solid electrolytes. Furthermore, we explore the extensive applications of IOSTs across multiple domains, such as multisensory bionics and neuromorphic computing. This article provides an exhaustive perspective on the research related to IOSTs and their system integration and applications, offering insights into their evolving landscape in neuromorphic electronics. © 2025 Author(s).

AB - Constrained by the physical architecture of von Neumann computing with separated storage and computation, neuromorphic computing architectures have been proposed. Ion-mediated oxide synaptic transistors (IOSTs), with their unique biomimetic characteristics, have become a key fundamental component in the construction of neuromorphic computing systems. This review comprehensively explores the biomimetic principles and critical indicators of IOSTs and discusses the unique advantages and recent developments associated with employing various electrolyte materials as the dielectric layers in IOSTs, including ionic liquids, ionic gels, organic polymer electrolytes, and inorganic solid electrolytes. Furthermore, we explore the extensive applications of IOSTs across multiple domains, such as multisensory bionics and neuromorphic computing. This article provides an exhaustive perspective on the research related to IOSTs and their system integration and applications, offering insights into their evolving landscape in neuromorphic electronics. © 2025 Author(s).

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Ion-mediated oxide transistors for neuromorphic electronics: Materials, devices, and perspectives

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