Ion focusing in enhanced glow discharge plasma immersion ion implantation of hydrogen and nitrogen into silicon

Qiu Yuan Lu; Zhuo Wang; Liu He Li; Ricky K. Y. Fu; Paul. K. Chu

doi:10.1063/1.3467967

Author(s)

Qiu Yuan Lu
Zhuo Wang
Liu He Li
Ricky K. Y. Fu
Paul. K. Chu

Detail(s)

Original language	English
Article number	33304
Journal / Publication	Journal of Applied Physics
Volume	108
Issue number	3
Publication status	Published - 1 Aug 2010

Link(s)

DOI	DOI https://doi.org/10.1063/1.3467967 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-77955862491&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(246c0f21-6668-4171-8367-28cc26843766).html

Abstract

Ion focusing in enhanced glow discharge plasma immersion ion implantation (EGD-PIII) of hydrogen into silicon affects the lateral ion fluence uniformity. The phenomenon and its effects are investigated experimentally and theoretically under different conditions and compared to those in nitrogen EGD-PIII. Consistent results are obtained from experiments and numerical simulation disclosing that the lower the plasma density, the more severe is the ion focusing effect. The influence of the negative high voltage on the ion focusing effect is small compared to that of the plasma density. © 2010 American Institute of Physics.

Research Area(s)

SDG 7 - Affordable and Clean Energy

Citation Format(s)

[ RIS ] [ BibTeX ]

Ion focusing in enhanced glow discharge plasma immersion ion implantation of hydrogen and nitrogen into silicon. / Lu, Qiu Yuan; Wang, Zhuo; Li, Liu He et al.
In: Journal of Applied Physics, Vol. 108, No. 3, 33304, 01.08.2010.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Lu, QY, Wang, Z, Li, LH, Fu, RKY & Chu, PK 2010, 'Ion focusing in enhanced glow discharge plasma immersion ion implantation of hydrogen and nitrogen into silicon', Journal of Applied Physics, vol. 108, no. 3, 33304. https://doi.org/10.1063/1.3467967

Lu, Q. Y., Wang, Z., Li, L. H., Fu, R. K. Y., & Chu, P. K. (2010). Ion focusing in enhanced glow discharge plasma immersion ion implantation of hydrogen and nitrogen into silicon. Journal of Applied Physics, 108(3), Article 33304. https://doi.org/10.1063/1.3467967

Lu QY, Wang Z, Li LH, Fu RKY, Chu PK. Ion focusing in enhanced glow discharge plasma immersion ion implantation of hydrogen and nitrogen into silicon. Journal of Applied Physics. 2010 Aug 1;108(3):33304. doi: 10.1063/1.3467967

Lu, Qiu Yuan ; Wang, Zhuo ; Li, Liu He et al. / Ion focusing in enhanced glow discharge plasma immersion ion implantation of hydrogen and nitrogen into silicon. In: Journal of Applied Physics. 2010 ; Vol. 108, No. 3.