Ion focusing in enhanced glow discharge plasma immersion ion implantation of hydrogen and nitrogen into silicon

Qiu Yuan Lu; Zhuo Wang; Liu He Li; Ricky K. Y. Fu; Paul. K. Chu

doi:10.1063/1.3467967

Ion focusing in enhanced glow discharge plasma immersion ion implantation of hydrogen and nitrogen into silicon

Qiu Yuan Lu, Zhuo Wang, Liu He Li, Ricky K. Y. Fu, Paul. K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

5 Citations (Scopus)

Abstract

Ion focusing in enhanced glow discharge plasma immersion ion implantation (EGD-PIII) of hydrogen into silicon affects the lateral ion fluence uniformity. The phenomenon and its effects are investigated experimentally and theoretically under different conditions and compared to those in nitrogen EGD-PIII. Consistent results are obtained from experiments and numerical simulation disclosing that the lower the plasma density, the more severe is the ion focusing effect. The influence of the negative high voltage on the ion focusing effect is small compared to that of the plasma density. © 2010 American Institute of Physics.

Original language	English
Article number	33304
Journal	Journal of Applied Physics
Volume	108
Issue number	3
DOIs	https://doi.org/10.1063/1.3467967
Publication status	Published - 1 Aug 2010

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title = "Ion focusing in enhanced glow discharge plasma immersion ion implantation of hydrogen and nitrogen into silicon",

abstract = "Ion focusing in enhanced glow discharge plasma immersion ion implantation (EGD-PIII) of hydrogen into silicon affects the lateral ion fluence uniformity. The phenomenon and its effects are investigated experimentally and theoretically under different conditions and compared to those in nitrogen EGD-PIII. Consistent results are obtained from experiments and numerical simulation disclosing that the lower the plasma density, the more severe is the ion focusing effect. The influence of the negative high voltage on the ion focusing effect is small compared to that of the plasma density. {\textcopyright} 2010 American Institute of Physics.",

author = "Lu, {Qiu Yuan} and Zhuo Wang and Li, {Liu He} and Fu, {Ricky K. Y.} and Chu, {Paul. K.}",

year = "2010",

month = aug,

day = "1",

doi = "10.1063/1.3467967",

language = "English",

volume = "108",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Ion focusing in enhanced glow discharge plasma immersion ion implantation of hydrogen and nitrogen into silicon

AU - Lu, Qiu Yuan

AU - Wang, Zhuo

AU - Li, Liu He

AU - Fu, Ricky K. Y.

AU - Chu, Paul. K.

PY - 2010/8/1

Y1 - 2010/8/1

N2 - Ion focusing in enhanced glow discharge plasma immersion ion implantation (EGD-PIII) of hydrogen into silicon affects the lateral ion fluence uniformity. The phenomenon and its effects are investigated experimentally and theoretically under different conditions and compared to those in nitrogen EGD-PIII. Consistent results are obtained from experiments and numerical simulation disclosing that the lower the plasma density, the more severe is the ion focusing effect. The influence of the negative high voltage on the ion focusing effect is small compared to that of the plasma density. © 2010 American Institute of Physics.

AB - Ion focusing in enhanced glow discharge plasma immersion ion implantation (EGD-PIII) of hydrogen into silicon affects the lateral ion fluence uniformity. The phenomenon and its effects are investigated experimentally and theoretically under different conditions and compared to those in nitrogen EGD-PIII. Consistent results are obtained from experiments and numerical simulation disclosing that the lower the plasma density, the more severe is the ion focusing effect. The influence of the negative high voltage on the ion focusing effect is small compared to that of the plasma density. © 2010 American Institute of Physics.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-77955862491&origin=recordpage

U2 - 10.1063/1.3467967

DO - 10.1063/1.3467967

M3 - RGC 21 - Publication in refereed journal

SN - 0021-8979

VL - 108

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

M1 - 33304

ER -

Ion focusing in enhanced glow discharge plasma immersion ion implantation of hydrogen and nitrogen into silicon

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