Ion channeling investigation of the lattice location of Sn atoms in GaAs thin films grown by molecular beam epitaxy

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

4 Scopus Citations
View graph of relations

Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)1784-1786
Journal / PublicationApplied Physics Letters
Volume56
Issue number18
Publication statusPublished - 1990
Externally publishedYes

Abstract

We have investigated the lattice location of Sn atoms in Sn-doped GaAs thin films grown by molecular beam epitaxy using ion channeling techniques. Accumulation of ≊2×1014 atoms/cm2 of Sn on the GaAs surface was detected. These surface Sn atoms were determined to be randomly distributed within ≊20 Å of the surface of the GaAs. Angular scans of the Ga Kα, As Kβ, and Sn L x rays across the 〈100〉, 〈110〉, and 〈111〉 axial channels indicated that the Sn atoms in the GaAs layer are mostly substitutional. No displacement of the Sn atoms larger than 0.14 Å from the substitutional sites was detected.