TY - JOUR
T1 - Ion channeling investigation of the lattice location of Sn atoms in GaAs thin films grown by molecular beam epitaxy
AU - Yu, Kin Man
AU - Lee, Henry P.
AU - Wang, S.
PY - 1990
Y1 - 1990
N2 - We have investigated the lattice location of Sn atoms in Sn-doped GaAs thin films grown by molecular beam epitaxy using ion channeling techniques. Accumulation of ≊2×1014 atoms/cm2 of Sn on the GaAs surface was detected. These surface Sn atoms were determined to be randomly distributed within ≊20 Å of the surface of the GaAs. Angular scans of the Ga Kα, As Kβ, and Sn L x rays across the 〈100〉, 〈110〉, and 〈111〉 axial channels indicated that the Sn atoms in the GaAs layer are mostly substitutional. No displacement of the Sn atoms larger than 0.14 Å from the substitutional sites was detected.
AB - We have investigated the lattice location of Sn atoms in Sn-doped GaAs thin films grown by molecular beam epitaxy using ion channeling techniques. Accumulation of ≊2×1014 atoms/cm2 of Sn on the GaAs surface was detected. These surface Sn atoms were determined to be randomly distributed within ≊20 Å of the surface of the GaAs. Angular scans of the Ga Kα, As Kβ, and Sn L x rays across the 〈100〉, 〈110〉, and 〈111〉 axial channels indicated that the Sn atoms in the GaAs layer are mostly substitutional. No displacement of the Sn atoms larger than 0.14 Å from the substitutional sites was detected.
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U2 - 10.1063/1.103099
DO - 10.1063/1.103099
M3 - RGC 21 - Publication in refereed journal
SN - 0003-6951
VL - 56
SP - 1784
EP - 1786
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 18
ER -