ION BEAM MODIFICATION OF SILICIDE-SILICON INTERFACES.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 1-5 |
| Journal / Publication | Radiation Effects |
| Volume | 49 |
| Issue number | 1-3 |
| Publication status | Published - 1980 |
| Externally published | Yes |
Conference
| Title | Proc of the Int Conf on Ion Beam Modif of Mater |
|---|---|
| City | Budapest, Hung |
| Period | 4 - 8 September 1978 |
Link(s)
Abstract
In this study, four kinds of processing have been used to modify Pd//2Si-silicon interfaces by ion implantation. The electrical properties and reaction kinetics of the interfaces have been examined by current-voltage measurements and high energy ion backscattering spectroscopy. Preliminary results are reported and discussed.
Bibliographic Note
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Citation Format(s)
ION BEAM MODIFICATION OF SILICIDE-SILICON INTERFACES. / Ohdomari, I.; Tu, K. N.; Hammer, W.
In: Radiation Effects, Vol. 49, No. 1-3, 1980, p. 1-5.
In: Radiation Effects, Vol. 49, No. 1-3, 1980, p. 1-5.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
