ION BEAM MODIFICATION OF SILICIDE-SILICON INTERFACES.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)1-5
Journal / PublicationRadiation Effects
Volume49
Issue number1-3
Publication statusPublished - 1980
Externally publishedYes

Conference

TitleProc of the Int Conf on Ion Beam Modif of Mater
CityBudapest, Hung
Period4 - 8 September 1978

Abstract

In this study, four kinds of processing have been used to modify Pd//2Si-silicon interfaces by ion implantation. The electrical properties and reaction kinetics of the interfaces have been examined by current-voltage measurements and high energy ion backscattering spectroscopy. Preliminary results are reported and discussed.

Bibliographic Note

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Citation Format(s)

ION BEAM MODIFICATION OF SILICIDE-SILICON INTERFACES. / Ohdomari, I.; Tu, K. N.; Hammer, W.
In: Radiation Effects, Vol. 49, No. 1-3, 1980, p. 1-5.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review