Abstract
In this study, four kinds of processing have been used to modify Pd//2Si-silicon interfaces by ion implantation. The electrical properties and reaction kinetics of the interfaces have been examined by current-voltage measurements and high energy ion backscattering spectroscopy. Preliminary results are reported and discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 1-5 |
| Journal | Radiation Effects |
| Volume | 49 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 1980 |
| Externally published | Yes |
| Event | Proc of the Int Conf on Ion Beam Modif of Mater - Budapest, Hung Duration: 4 Sept 1978 → 8 Sept 1978 |
Bibliographical note
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