Investigations of thin films on GaAs using the proton resonant scattering technique

Kin Man Yu; J. M. Jaklevic; E. E. Haller

doi:10.1016/0168-583X(88)90132-2

Investigations of thin films on GaAs using the proton resonant scattering technique

Kin Man Yu, J. M. Jaklevic, E. E. Haller

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

13 Citations (Scopus)

Abstract

We have characterized a number of thermally stable thin film/GaAs systems including thin films of refractory metal suicides and nitrides as well as dielectric films on GaAs substrates using a MeV proton scattering technique. Thin films of tungsten suicides, zirconium nitride and silicon dioxide on GaAs substrates are investigated. The enhanced proton scattering cross sections of nitrogen, silicon and oxygen at their corresponding resonant energies enable us to accurately measure the compositions of these films. The advantages and disadvantages of this technique regarding depth resolution, accessible depth, and mass resolution compared to the conventional Rutherford backscattering spectrometry for thin film analysis are discussed. © 1988.

Original language	English
Pages (from-to)	551-556
Journal	Nuclear Inst. and Methods in Physics Research, B
Volume	30
Issue number	4
DOIs	https://doi.org/10.1016/0168-583X(88)90132-2
Publication status	Published - 1 Apr 1988
Externally published	Yes

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title = "Investigations of thin films on GaAs using the proton resonant scattering technique",

abstract = "We have characterized a number of thermally stable thin film/GaAs systems including thin films of refractory metal suicides and nitrides as well as dielectric films on GaAs substrates using a MeV proton scattering technique. Thin films of tungsten suicides, zirconium nitride and silicon dioxide on GaAs substrates are investigated. The enhanced proton scattering cross sections of nitrogen, silicon and oxygen at their corresponding resonant energies enable us to accurately measure the compositions of these films. The advantages and disadvantages of this technique regarding depth resolution, accessible depth, and mass resolution compared to the conventional Rutherford backscattering spectrometry for thin film analysis are discussed. {\textcopyright} 1988.",

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TY - JOUR

T1 - Investigations of thin films on GaAs using the proton resonant scattering technique

AU - Yu, Kin Man

AU - Jaklevic, J. M.

AU - Haller, E. E.

PY - 1988/4/1

Y1 - 1988/4/1

N2 - We have characterized a number of thermally stable thin film/GaAs systems including thin films of refractory metal suicides and nitrides as well as dielectric films on GaAs substrates using a MeV proton scattering technique. Thin films of tungsten suicides, zirconium nitride and silicon dioxide on GaAs substrates are investigated. The enhanced proton scattering cross sections of nitrogen, silicon and oxygen at their corresponding resonant energies enable us to accurately measure the compositions of these films. The advantages and disadvantages of this technique regarding depth resolution, accessible depth, and mass resolution compared to the conventional Rutherford backscattering spectrometry for thin film analysis are discussed. © 1988.

AB - We have characterized a number of thermally stable thin film/GaAs systems including thin films of refractory metal suicides and nitrides as well as dielectric films on GaAs substrates using a MeV proton scattering technique. Thin films of tungsten suicides, zirconium nitride and silicon dioxide on GaAs substrates are investigated. The enhanced proton scattering cross sections of nitrogen, silicon and oxygen at their corresponding resonant energies enable us to accurately measure the compositions of these films. The advantages and disadvantages of this technique regarding depth resolution, accessible depth, and mass resolution compared to the conventional Rutherford backscattering spectrometry for thin film analysis are discussed. © 1988.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0023996847&origin=recordpage

U2 - 10.1016/0168-583X(88)90132-2

DO - 10.1016/0168-583X(88)90132-2

M3 - RGC 21 - Publication in refereed journal

SN - 0168-583X

VL - 30

SP - 551

EP - 556

JO - Nuclear Inst. and Methods in Physics Research, B

JF - Nuclear Inst. and Methods in Physics Research, B

IS - 4

ER -

Investigations of thin films on GaAs using the proton resonant scattering technique

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