Investigation of the glassy layer formed at the top of porous silicon films

H. Wong; P. G. Han; M. C. Poon; Y. Gao

doi:10.1109/HKEDM.2000.904229

Investigation of the glassy layer formed at the top of porous silicon films

H. Wong, P. G. Han, M. C. Poon, Y. Gao

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

The surface properties of porous silicon (PS) play a vital role in its applications in optoelectronic devices and PS-based chemical/biological sensory devices. We have investigated the effects of reactive ion etching (RIE) treatment on the surface structures, optical properties and internal stresses of the PS films. Experimental results show that there is a thin layer of glassy, mirror-like material covered on the top of the PS films and the main composites of this layer are silicon oxides. When removing away this layer, the photoluminescence (PL) intensities decrease sharply, micro-Raman resonant peaks (near 516 cm^-1) shift slightly and the intensities reduce significantly. The functions of the top layer and mechanisms of interaction with PS films will be discussed in this paper. © 2000 IEEE

Original language	English
Title of host publication	Proceedings 2000 IEEE Hong Kong Electron Devices Meeting
Publisher	IEEE
Pages	116-120
ISBN (Print)	0-7803-6304-3
DOIs	https://doi.org/10.1109/HKEDM.2000.904229
Publication status	Published - Jun 2000
Event	2000 IEEE Hong Kong Electron Devices Meeting - Hong Kong, China Duration: 24 Jun 2000 → 24 Jun 2000

Conference

Conference	2000 IEEE Hong Kong Electron Devices Meeting
Place	China
City	Hong Kong
Period	24/06/00 → 24/06/00

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@inproceedings{48b30aaf6b84482184f1a1975db20671,

title = "Investigation of the glassy layer formed at the top of porous silicon films",

abstract = "The surface properties of porous silicon (PS) play a vital role in its applications in optoelectronic devices and PS-based chemical/biological sensory devices. We have investigated the effects of reactive ion etching (RIE) treatment on the surface structures, optical properties and internal stresses of the PS films. Experimental results show that there is a thin layer of glassy, mirror-like material covered on the top of the PS films and the main composites of this layer are silicon oxides. When removing away this layer, the photoluminescence (PL) intensities decrease sharply, micro-Raman resonant peaks (near 516 cm-1) shift slightly and the intensities reduce significantly. The functions of the top layer and mechanisms of interaction with PS films will be discussed in this paper. {\textcopyright} 2000 IEEE",

author = "H. Wong and Han, {P. G.} and Poon, {M. C.} and Y. Gao",

year = "2000",

month = jun,

doi = "10.1109/HKEDM.2000.904229",

language = "English",

isbn = "0-7803-6304-3",

pages = "116--120",

booktitle = "Proceedings 2000 IEEE Hong Kong Electron Devices Meeting",

publisher = "IEEE",

address = "United States",

note = "2000 IEEE Hong Kong Electron Devices Meeting ; Conference date: 24-06-2000 Through 24-06-2000",

}

TY - GEN

T1 - Investigation of the glassy layer formed at the top of porous silicon films

AU - Wong, H.

AU - Han, P. G.

AU - Poon, M. C.

AU - Gao, Y.

PY - 2000/6

Y1 - 2000/6

N2 - The surface properties of porous silicon (PS) play a vital role in its applications in optoelectronic devices and PS-based chemical/biological sensory devices. We have investigated the effects of reactive ion etching (RIE) treatment on the surface structures, optical properties and internal stresses of the PS films. Experimental results show that there is a thin layer of glassy, mirror-like material covered on the top of the PS films and the main composites of this layer are silicon oxides. When removing away this layer, the photoluminescence (PL) intensities decrease sharply, micro-Raman resonant peaks (near 516 cm-1) shift slightly and the intensities reduce significantly. The functions of the top layer and mechanisms of interaction with PS films will be discussed in this paper. © 2000 IEEE

AB - The surface properties of porous silicon (PS) play a vital role in its applications in optoelectronic devices and PS-based chemical/biological sensory devices. We have investigated the effects of reactive ion etching (RIE) treatment on the surface structures, optical properties and internal stresses of the PS films. Experimental results show that there is a thin layer of glassy, mirror-like material covered on the top of the PS films and the main composites of this layer are silicon oxides. When removing away this layer, the photoluminescence (PL) intensities decrease sharply, micro-Raman resonant peaks (near 516 cm-1) shift slightly and the intensities reduce significantly. The functions of the top layer and mechanisms of interaction with PS films will be discussed in this paper. © 2000 IEEE

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U2 - 10.1109/HKEDM.2000.904229

DO - 10.1109/HKEDM.2000.904229

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0-7803-6304-3

SP - 116

EP - 120

BT - Proceedings 2000 IEEE Hong Kong Electron Devices Meeting

PB - IEEE

T2 - 2000 IEEE Hong Kong Electron Devices Meeting

Y2 - 24 June 2000 through 24 June 2000

ER -

Investigation of the glassy layer formed at the top of porous silicon films

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